ROHM IMH23 User Guide
Summary
This comprehensive manual details the IMH23 dual digital transistor, an NPN built-in resistor type ideal for reliable switching and multiplexing circuits. Featuring low saturation voltage and high current handling capabilities, it provides exceptional performance in control applications. The documentation covers complete electrical specifications, operational curves (including VCE(sat) and ON resistance), absolute maximum ratings, and packaging guidelines for electronics designers building robust digital circuits.
Page 1 Text Content
IMH23
Transistors
Dual digital transistors IMH23
Features External dimensions (Unit : mm)
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically SMT6
VCE (sat) =40m V at IC / IB=50m A / 2.5m A, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels,
1.6 1pin mark
IC=600m A.
3) Two DTC643T chips in a SMT package.
0.3Min.
Each lead has same dimensions
Structure
Abbreviated symbol : H23
NPN digital transistor (Built-in resistor type)
Equivalent circuit (4) (5) (6)
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC m A
Collector power dissipation 300(TOTAL)PC m W Tj 150Junction temperature °C
Storage temperature Tstg −55 to +150 °C
∗ 200m W per element must not be a exceeded.
Page Summary Contents For ROHM IMH23 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 59.53 KB |
| Published | July 12, 2026 |
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