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ROHM 2SD2675 User Guide

Summary

This general-purpose low frequency amplifier transistor is engineered for reliable signal amplification in diverse electronic circuits. The accompanying technical manual provides a comprehensive datasheet covering absolute maximum ratings, key electrical parameters (including transition frequency and DC current gain), and detailed performance curves for designers. This resource is essential for electronics engineers and circuit architects who require precise data—such as saturation voltage characteristics and timing specifications—to optimally integrate high-performance amplification into their designs.

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2SD2675

Transistors

General purpose amplification (30V, 1A) 2SD2675

Application External dimensions (Unit : mm)

Low frequency amplifier

TSMT3

1.0MAX

Features 0.4 0.7

1) A collector current is large. (3)

2) Collector saturation voltage is low.

VCE(sat) : max.350m V (2)(1) 0.950.95

At IC = 500m A / IB = 25m A 0.16

(1) Base (2) Emitter

(3) Collector Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping

1. VCBO VCollector-base voltage 2.

Type Code TL

VCEO VCollector-emitter voltage

VEBO VEmitter-base voltage Basic ordering unit (pieces)

Collector current 2SD2675 0. 3~ 0.

ICP ∗1 m W

Power dissipation PC

Tj °CJunction temperature Tstg −55 to +150 °CRange of storage temperature

∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× 0.8mm Ceramic substrate

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BVCBO IC=10µACollector-base breakdown voltage BVCEO IC=1m ACollector-emitter breakdown voltage BVEBO IE=10µAEmitter-base breakdown voltage ICBO n A VCB=30VCollector cutoff current

Emitter cutoff current n A VEB=6VIEBO

VCE(sat) m V IC/IB=500m A/25m ACollector-emitter saturation voltage h FE VCE/IC=2V/100m ADC current gain f T MHz VCE=2V, IE=−100m A, f=100MHz Transition frequency Cob p F VCB=10V, IE=0A, f=1MHz Corrector output capacitance

∗ Pulsed

Rev.B 1/2

Page Summary Contents For ROHM 2SD2675 User Guide

Page 1 2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 Application External dimensions (Unit : mm) Low frequency amplifier TSMT3 1.0MAX Features 0.4 0.7 1) A collector current is large. (...
Page 2 IT IT ib p F 2SD2675 IN h F LL IC (A LL IT ob p F Transistors Electrical characteristic curves IC/IB=20 /1 Ta=25°C Ta=100°C Pulsed VCE=2V VBE(sat) Ta=−40°C Ta=25°C Ta=100°C Ta=25°C Ta=−40°C IC/IB=50/1...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 68.23 KB
Published July 16, 2026
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Frequently Asked Questions

What is the maximum recommended power dissipation?

The maximum rating for power dissipation (PC) is 1 W, provided it is mounted on a specific ceramic substrate.

Can this transistor be used in highly reliable, safety-critical systems?

No; if using it with equipment where malfunction could directly endanger human life, you must consult your sales representative first.

What is the typical value for the collector saturation voltage (VCE(sat))?

Under conditions of IC=500mA and IB=25mA, the typical VCE(sat) is 350mV.