ROHM 2SD2675 User Guide
Summary
This general-purpose low frequency amplifier transistor is engineered for reliable signal amplification in diverse electronic circuits. The accompanying technical manual provides a comprehensive datasheet covering absolute maximum ratings, key electrical parameters (including transition frequency and DC current gain), and detailed performance curves for designers. This resource is essential for electronics engineers and circuit architects who require precise data—such as saturation voltage characteristics and timing specifications—to optimally integrate high-performance amplification into their designs.
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2SD2675
Transistors
General purpose amplification (30V, 1A) 2SD2675
Application External dimensions (Unit : mm)
Low frequency amplifier
TSMT3
1.0MAX
Features 0.4 0.7
1) A collector current is large. (3)
2) Collector saturation voltage is low.
VCE(sat) : max.350m V (2)(1) 0.950.95
At IC = 500m A / IB = 25m A 0.16
(1) Base (2) Emitter
(3) Collector Each lead has same dimensions
Absolute maximum ratings (Ta=25°C) Packaging specifications
Parameter Symbol Limits Unit Package Taping
1. VCBO VCollector-base voltage 2.
Type Code TL
VCEO VCollector-emitter voltage
VEBO VEmitter-base voltage Basic ordering unit (pieces)
Collector current 2SD2675 0. 3~ 0.
ICP ∗1 m W
Power dissipation PC
Tj °CJunction temperature Tstg −55 to +150 °CRange of storage temperature
∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× 0.8mm Ceramic substrate
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO IC=10µACollector-base breakdown voltage BVCEO IC=1m ACollector-emitter breakdown voltage BVEBO IE=10µAEmitter-base breakdown voltage ICBO n A VCB=30VCollector cutoff current
Emitter cutoff current n A VEB=6VIEBO
VCE(sat) m V IC/IB=500m A/25m ACollector-emitter saturation voltage h FE VCE/IC=2V/100m ADC current gain f T MHz VCE=2V, IE=−100m A, f=100MHz Transition frequency Cob p F VCB=10V, IE=0A, f=1MHz Corrector output capacitance
∗ Pulsed
Rev.B 1/2
Page Summary Contents For ROHM 2SD2675 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 68.23 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What is the maximum recommended power dissipation?
The maximum rating for power dissipation (PC) is 1 W, provided it is mounted on a specific ceramic substrate.
Can this transistor be used in highly reliable, safety-critical systems?
No; if using it with equipment where malfunction could directly endanger human life, you must consult your sales representative first.
What is the typical value for the collector saturation voltage (VCE(sat))?
Under conditions of IC=500mA and IB=25mA, the typical VCE(sat) is 350mV.