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ROHM 2SD2444K User Guide

Summary

This detailed technical datasheet covers the high-performance 2SD2444K NPN Power Transistor, designed for robust electronic switching and amplification applications. The manual provides essential information, including absolute maximum ratings, comprehensive electrical characteristics, and performance graphs detailing parameters like hFE and transition frequency (fT). It is an indispensable resource for electronics engineers and circuit designers developing reliable power management systems requiring precise transistor specifications.

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2SD2444K

Transistors

Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.)

at IC / IB = 0.4A / 20m A. 2) IC = 1A 2.9 1.1

3) Complements the 2SB1590K.

Packaging specification and h FE (2) (1) 0.95 0.95

Type 2SD2444K

(1)Emitter

Package SMT3 (2)Base

Each lead has same dimensions

(3)Collector

Marking BS∗

Code T146

Basic ordering unit (pieces) ∗ Denotes h FE

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

0. 3M in

Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO

Collector current IC A (DC)

Collector power dissipation PC 0.2

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=50µA

Collector-emitter breakdown voltage BVCEO IC=1m A

Emitter-base breakdown voltage BVEBO IE=50µA

Collector cutoff current ICBO 0.5 µA VCB=12V

Emitter cutoff current IEBO 0.5 µA VEB=5V

Collector-emitter saturation voltage VCE(sat) 0.3 IC=400m A, IB=20m A

DC current transfer ratio h FE VCE/IC=2V/50m A−

Transition frequency f T MHz VCE=2V, IE= −50m A, f=100MHz

Output capacitance Cob p F VCB=10V, IE=0A, f=1MHz

Rev.A 1/2

Page Summary Contents For ROHM 2SD2444K User Guide

Page 1 2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20m A. 2) IC = 1A 2.9 1.1 3) Com...
Page 2 LL TO TU TI LT (s at ) ( 2SD2444K IN h F IS IP IO ax . ( Transistors Electrical characteristic curves 1.0 Ta=25°C Ta=25°C 6m A VCE=2V 0.9 Ta=125°C 8m A 4m A 200m 25°C 0.7 7m A 100m −40°C IB=1m A IT IO...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 68.46 KB
Published June 02, 2026
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Frequently Asked Questions

What is the maximum collector power allowed?

The sheet does not specify a hard limit but shows parameters up to 0.2W for Collector power dissipation (Pc).

Does this transistor complement another part?

Yes, it complements the 2SB1590K.

What is the maximum temperature rating for storage?

The storage temperature range (Tstg) is from -55 to +150°C.

How low can the saturation voltage go?

The maximum collector-emitter saturation voltage, VCE(sat), is 0.3V at I_C = 400mA and I_B = 20mA.