ROHM 2SD1834 User Guide

Summary

This medium power transistor is a robust electronic component engineered for reliable switching and high current gain in various circuits. The accompanying technical manual provides exhaustive details, including absolute maximum ratings, detailed electrical characteristics (such as $h_{FE}$ and breakdown voltages), and performance graphs for precise circuit design validation. It is essential documentation for electronics engineers and designers building professional equipment, including communication devices, industrial controls, and audio/visual systems.

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Medium Power Transistor (60V, 1A) 2SD1834 Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain

(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. 4.5

Inner circuit (3)(2)(1)

1.51.5 (1)Base 3.0

(2)Collector (3)Emitter

: Base : Collector : Emitter

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO Collector-emitter voltage VCES ∗2 Emitter-base voltage VEBO

A(DC) 1. 0.

Collector current IC 4. 02.

A(Pulse) ∗1

Collector power dissipation PC

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

∗1 Single pulse Pw=100ms ∗2 RBE=0Ω

∗3 Mounted on a 40×40× t0.7mm ceramic substrate

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=50μA

Collector-emitter breakdown voltage BVCEO IC=100μA , RBE=0Ω

Emitter-base breakdown voltage BVEBO IE=50μA Collector cutoff current ICBO μA VCB=60V Emitter cutoff current IEBO μA VEB=6V DC current transfer ratio h FE VCE/IC=3V/500m A Collector-emitter saturation voltage VCE(sat) 0.9 1.5 IC/IB=500m A/500μA Transition frequency f T MHz VCE=5V , IE= −10m A , f=100MHz

Output capacitance Cob p F VCE=10V , IE=0A , f=1MHz

∗ Measured using pulse current.

www.rohm.com

1/2 2010.02 - Rev.B

Page Summary Contents For ROHM 2SD1834 User Guide

Page 1 Medium Power Transistor (60V, 1A) 2SD1834 Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input ...

Page 2 Data Sheet 2SD1834 LL TO TU TI LT (s at ) ( LL IC  Packaging specifications and h FE Type 2SD1834 Package MPT3 h FE 2k~ Marking DE∗ Pw=10m T100Code Basic ordering unit (pieces) Pw=100m ∗Denotes h FE ...

Page 3 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	3
File Size	130.90 KB
Published	June 01, 2026

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Frequently Asked Questions

What is the typical DC current gain of this transistor?

The datasheet specifies a typical DC current gain (MPT3) of 15000 at VCE = 3V and IC = 0.5A.

What are the absolute maximum ratings for voltage and power dissipation?

The collector-emitter voltage (VCES) and collector-base voltage (VCBO) limits are both 60V, and the maximum collector power dissipation (PC) is 2W.

Can this transistor handle high frequencies?

Its transition frequency (fT) is rated at -150 MHz, tested under conditions of VCE=5V and IE=-10mA.

Is there a requirement for mounting the device during operation?

Yes, under absolute maximum ratings testing, the unit must be mounted on a 40×40× 0.7mm ceramic substrate.