ROHM 2SD1781K User Guide

Summary

The 2SD1781K is a reliable medium-power NPN silicon transistor designed for switching and amplification applications. This technical manual provides professional electronic designers with comprehensive data, including full electrical characteristic curves, saturation voltages, absolute maximum ratings, and operational guidelines. It ensures optimal integration of this high-capacity component into complex circuits built by electronics engineers.

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2SD1781K

Transistors

Medium Power Transistor (32V, 0.8A) 2SD1781K

Features External dimensions (Unit : mm)

1) Very Low VCE(sat).

VCE(sat) = 0.1V(Typ.) +0.2 1.1 1.9±0.2 −0.1

IC / IB= 500 A / 50m A 0.8±0.1

2) High current capacity in compact package.

3) Complements the 2SB1197K. 0~0.1

Structure

All terminals have Epitaxial planar type same dimensions (1) Emitter

ROHM : SMT3 (2) Base

NPN silicon transistor EIAJ : SC-59 Abbreviated symbol : AF∗

(3) Collector

Denotes h FE

Absolute maximum ratings (Ta=25 C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO

Collector-emitter voltage VCEO

Emitter-base voltage VEBO

IC 0.8 A (DC)

Collector current

ICP A (Pulse)1.5

Collector power dissipation PC m W

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C

∗ Single pulse Pw=100ms

Rev.A 1/3

Page Summary Contents For ROHM 2SD1781K User Guide

Page 1 2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K Features External dimensions (Unit : mm) 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) +0.2 1.1 1.9±0.2 −0.1 IC / IB= 500 A / 50m A 0.8±...

Page 2 LL TO : I (m 2SD1781K Transistors Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO IC=50μA Collector-emitter breakdown voltag...

Page 3 CO LL EC TO UT PU 2SD1781K AP AC IT AN CE Co (p F) CO LL EC TO AT UR AT IO LT AG : V CE (s at )(m V) Transistors Ta=25°C l C/l B=10 Ta=25°C VCE=5V Ta=100°C 25°C −55°C IC/IB=50 CO LL EC TO AT UR AT IO ...

Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	4
File Size	47.82 KB
Published	July 15, 2026

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Frequently Asked Questions

What is the typical saturation voltage?

The Collector-emitter saturation voltage VCE(sat) is typically 0.4V.

Can this transistor complement another model?

Yes, it complements the 2SB1197K.

What are the maximum ratings for collector current and power dissipation?

The maximum DC collector current (IC) is 0.8A, and the maximum collector power dissipation (PC) is 200mW.

How sensitive is this transistor to temperature changes?

Its junction temperature can operate up to 150°C, and storage temperature ranges from -55 to +150°C.