ROHM 2SD1757K User Guide

2SD1757K

Transistors

Power Transistor (15V, 0.5A) 2SD1757K

Features External dimensions (Unit : mm)

1) Low VCE(sat). (Typ.8m V at IC/IB = 10/1m A) 2) Optimal for muting.

Absolute maximum ratings (Ta=25°C) 2.8 Parameter Symbol Limits Unit Collector-base voltage VCBO Collector-emitter voltage VCEO

Each lead has same dimensions

Emitter-base voltage VEBO 6.5

(1) Emitter

Collector current IC 0.5

ROHM : SMT3 (2) Base

Collector power dissipation PC 0.2 (3) Collector

EIAJ : SC-59

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

Packaging specifications and h FE Type 2SD1757K 0t o0 .10.3to0.6

Package SMT3 h FE QRS 0.

0. 0. Marking AA 1. 1. 2.

Code T146

Basic ordering unit (pieces) ∗ Denotes h FE

Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=50µA

Collector-emitter breakdown voltage BVCEO IC=1m A

Emitter-base breakdown voltage BVEBO 6.5 IE=50µA

Collector cutoff current ICBO 0.5 µA VCB=20V Emitter cutoff current IEBO 0.5 µA VEB=4V

Collector-emitter saturation voltage VCE(sat) 0.1 0.4 IC/IB=500m A/50m A

DC current transfer ratio h FE VCE/IC=3V/100m A Transition frequency f T MHz VCE=5V , IE=−50m A , f=100MHz Output capacitance Cob p F VCB=10V , IE=0A , f=1MHz

Rev.A 1/3