ROHM 2SB1731 User Guide
Summary
The 2SB1731 is a versatile low-frequency amplifier transistor ideal for audio, driver, and general amplification applications requiring high collector current capability. This manual provides comprehensive technical documentation, including absolute maximum ratings, detailed electrical characteristics (e.g., gain bandwidth product, saturation voltage), and performance graphs at various temperatures. It is essential reference material for electronics engineers, circuit designers, and technicians who need precise specifications to successfully integrate the transistor into industrial or consumer electronic devices.
Page 1 Text Content
2SB1731
Transistors
Low frequency amplifier 2SB1731
Application Dimensions (Unit : mm)
Low frequency amplifier Driver
Features 1) A collector current is large. 2) VCE(sat) ≤−370m V at IC =−1A / IB =−50m A
ROHM : TUMT3 Abbreviated symbol : FL (1)Base
(2)Emitter (3)Collector
Absolute maximum ratings (Ta=25°C) Packaging specifications
Parameter Symbol Limits Unit Package Taping
Collector-base voltage VCBO −30
Type Code TL
Collector-emitter voltage VCEO −30
Basic ordering unit (pieces)
Emitter-base voltage VEBO −6 0. 2M ax
2SB1731
IC −1.5
Collector current
ICP −3 Power dissipation PC m W Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C
∗Single pulse, PW=1ms
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −30 IC=−10µA Collector-emitter breakdown voltage BVCEO −30 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−10µA
Collector cutoff current ICBO −100 n A VCB=−30V
Emitter cutoff current IEBO −100 n A VEB=−6V
Collector-emitter saturation voltage VCE(sat) −200 −370 m V IC=−1A, IB=−50m A DC current gain h FE VCE=−2V, IC=−100m A
Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz Corrector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A 1/2
Page Summary Contents For ROHM 2SB1731 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 106.31 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
What are the absolute maximum ratings for Collector-Emitter Voltage and Power Dissipation?
The Collector-emitter voltage ($V_{CEO}$) is limited to -30 V, and the power dissipation ($P_C$) must not exceed 400 mW.
How can I determine if this transistor is suitable for life-critical applications?
The manual states that users should consult a representative before using it in devices requiring an extremely high level of reliability (e.g., medical or aerospace machinery).
What is the typical Collector-emitter saturation voltage ($V_{CE(sat)}$) ?
Under specific conditions ($I_C = -1A / I_B = -50mA$), the $V_{CE(sat)}$ is typically around -370 mV.
What is the maximum available Collector current for this transistor?
The datasheet specifies that the maximum collector current ($I_C$) can reach up to -1.5 A.