ROHM 2SB1698 User Guide

Summary

This transistor, ideal for low-frequency amplification or use as a powerful driver component, is designed for engineers building reliable electrical equipment. The comprehensive manual covers all critical performance data, including absolute maximum ratings, temperature-dependent electrical characteristics (like breakthrough voltages and saturation points), detailed switching times, and current gain specifications. Use this resource when designing circuits that require stable, high-performance amplification across varying operating conditions.

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2SB1698

Transistors

Low frequency amplifier 2SB1698

Application Dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) A collector current is large. 2) VCE(sat) ≤ −370m V at IC =−1A / IB =−50m A

Each lead has same dimensions

ROHM : MPT3 (1)Base

JEITA : SC-62 (2)Collector JEDEC: SOT-89

(3)Emitter

Abbreviated symbol: FL

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping

Collector-base voltage VCBO −30

Type Code T100

Collector-emitter voltage VCEO −30

Basic ordering unit (pieces)

Emitter-base voltage VEBO −6

IC −1.5 2SB1698

Collector current

ICP −3

Power dissipation PC

Junction temperature tj °C Range of storage temperature tstg −55 to +150 °C

∗1 Single pulse, PW=1ms

∗2 Mounted on a 40 +40+ 0.7(mm)CERAMIC SUBSTRATE

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC=−10µA

Collector-emitter breakdown voltage BVCEO −30 IC=−1m A

Emitter-base breakdown voltage BVEBO −6 IE=−10µA

Collector cutoff current ICBO −100 n A VCB=−30V

Emitter cutoff current IEBO −100 n A VEB=−6V

Collector-emitter saturation voltage VCE(sat) −200 −370 m V IC=−1A, IB=−50m A DC current gain h FE VCE=−2V, IC=−100m A

Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz Collector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.A 1/2

Page Summary Contents For ROHM 2SB1698 User Guide

Page 1 2SB1698 Transistors Low frequency amplifier 2SB1698 Application Dimensions (Unit : mm) Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) ≤ −370m V at IC =−1A / IB =−...

Page 2 IT IN IM (n s) IO LT 2SB1698 sa t) (V LL IC LL IO LT sa t) (V Transistors Electrical characteristic curves VCE=−2V VCE=−2V Ta=25°C Ta=100°C Pulsed Pulsed Pulsed Ta=25°C Ta=100°C Ta=25°C Ta=−40°C Ta=−4...

Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	3
File Size	118.21 KB
Published	June 21, 2026

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Frequently Asked Questions

What safety considerations must I follow when designing circuits with this component?

You must account for derating characteristics and allow for sufficient safety features, such as an extra margin or anti-flammability measures to prevent accidents.

What is the maximum permissible power dissipation (Pc) rating?

The maximum power dissipation (Pc*) listed is 500 mW, when mounted on a specified CERAMIC SUBSTRATE.

Am I allowed to use this transistor in safety-critical systems like medical equipment?

No. If your equipment requires an extremely high level of reliability for human life, you must consult our sales representative before using it.

What is the low-frequency performance metric (transition frequency)?

The transition frequency (fT) is listed with a minimum typical value of -280 MHz.