ROHM 2SB1697 User Guide
Summary
A PNP silicon transistor designed for low-frequency amplifier applications rated at -12V collector-emitter voltage and -2A collector current. Features low VCE(sat) of -180mV maximum at -1A/-50mA, high DC current gain (hFE) of 270 to 680, and transition frequency of 360MHz. Packaged in SOT-89 surface-mount format with 500mW power dissipation. Includes safe operating area curves and thermal derating specifications. Intended for audio amplifier designers and power management circuit engineers requiring reliable PNP switching and amplification in consumer electronics, automotive subsystems, and general-purpose analog circuits.
Page 1 Text Content
2SB1697
Transistors
Low Frequency Amplifier (-12V, -2A) 2SB1697
Features External dimensions (Unit : mm)
Low VCE(sat)
VCE(sat) ≤ −180m V
(IC /IB=−1A/−50m A)
Each lead has same dimensions
Abbreviated symbol: FV
ROHM : MPT3 (1)Base
JEITA : SC-62 (2)Collector 0. 0.
JEDEC: SOT-89 0. 0.
(3)Emitter
Absolute maximum ratings (Ta=25°C) Packaging specifications 1.
Parameter Symbol Limits Unit Package Taping
Collector-base voltage VCBO −15
Type Code T100
Collector-emitter voltage VCEO −12
Basic ordering unit (pieces)
Emitter-base voltage VEBO −6
2SB1697
−2 A(DC)
Collector current IC
−4 A(Pulse) ∗2 Collector power dissipation PC m W Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C
∗1 Single pulse, PW=1ms ∗2 When mounted on a 40x40x0.7 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −15 IC= −10µA
Collector-emitter breakdown voltage BVCEO −12 IC= −1m A
Emitter-base breakdown voltage BVEBO −6 IE= −10µA
Collector cutoff current ICBO −100 n A VCB= −15V Emitter cutoff current IEBO −100 n A VEB= −6V
Collector-emitter saturation voltage VCE(sat) −100 −180 m V IC/IB= −1A/ −50m A DC current transfer ratio h FE VCE= −2V, IC= −200m A Transition frequency f T MHz VCE= −2V, IE=200m A, f=100MHz
Output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A 1/2
Page Summary Contents For ROHM 2SB1697 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 102.86 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the maximum collector current for the 2SB1697 transistor?
The DC collector current is -2A, with a pulse rating of -4A.
What is the package type of the 2SB1697?
It uses the ROHM MPT3, JEITA SC-62, and JEDEC SOT-89 package.
What is the maximum collector-emitter voltage?
The absolute maximum collector-emitter voltage VCEO is -12V.
What is the typical transition frequency of this transistor?
The typical transition frequency fT is 360 MHz at VCE=-2V and IE=200mA.