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ROHM 2SB1697 User Guide

Summary

A PNP silicon transistor designed for low-frequency amplifier applications rated at -12V collector-emitter voltage and -2A collector current. Features low VCE(sat) of -180mV maximum at -1A/-50mA, high DC current gain (hFE) of 270 to 680, and transition frequency of 360MHz. Packaged in SOT-89 surface-mount format with 500mW power dissipation. Includes safe operating area curves and thermal derating specifications. Intended for audio amplifier designers and power management circuit engineers requiring reliable PNP switching and amplification in consumer electronics, automotive subsystems, and general-purpose analog circuits.

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2SB1697

Transistors

Low Frequency Amplifier (-12V, -2A) 2SB1697

Features External dimensions (Unit : mm)

Low VCE(sat)

VCE(sat) ≤ −180m V

(IC /IB=−1A/−50m A)

Each lead has same dimensions

Abbreviated symbol: FV

ROHM : MPT3 (1)Base

JEITA : SC-62 (2)Collector 0. 0.

JEDEC: SOT-89 0. 0.

(3)Emitter

Absolute maximum ratings (Ta=25°C) Packaging specifications 1.

Parameter Symbol Limits Unit Package Taping

Collector-base voltage VCBO −15

Type Code T100

Collector-emitter voltage VCEO −12

Basic ordering unit (pieces)

Emitter-base voltage VEBO −6

2SB1697

−2 A(DC)

Collector current IC

−4 A(Pulse) ∗2 Collector power dissipation PC m W Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

∗1 Single pulse, PW=1ms ∗2 When mounted on a 40x40x0.7 mm ceramic board.

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC= −10µA

Collector-emitter breakdown voltage BVCEO −12 IC= −1m A

Emitter-base breakdown voltage BVEBO −6 IE= −10µA

Collector cutoff current ICBO −100 n A VCB= −15V Emitter cutoff current IEBO −100 n A VEB= −6V

Collector-emitter saturation voltage VCE(sat) −100 −180 m V IC/IB= −1A/ −50m A DC current transfer ratio h FE VCE= −2V, IC= −200m A Transition frequency f T MHz VCE= −2V, IE=200m A, f=100MHz

Output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.A 1/2

Page Summary Contents For ROHM 2SB1697 User Guide

Page 1 2SB1697 Transistors Low Frequency Amplifier (-12V, -2A) 2SB1697 Features External dimensions (Unit : mm) Low VCE(sat) VCE(sat) ≤ −180m V (IC /IB=−1A/−50m A) Each lead has same dimensions Abbreviated s...
Page 2 LL IO LT 2SB1697 (s at (m LL IC (m Transistors Electrical characteristic curves −10 Ta=100°C Ta=25°C VBE(sat) Ta=−40°C Ta=100°C Ta=25°C −0.1 0.1 Ta=−40°C Ta=−40°C Ta=25°C Ta=100°C Ta=100°C VCE(sat) Ta...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 102.86 KB
Published June 17, 2026
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Frequently Asked Questions

What is the maximum collector current for the 2SB1697 transistor?

The DC collector current is -2A, with a pulse rating of -4A.

What is the package type of the 2SB1697?

It uses the ROHM MPT3, JEITA SC-62, and JEDEC SOT-89 package.

What is the maximum collector-emitter voltage?

The absolute maximum collector-emitter voltage VCEO is -12V.

What is the typical transition frequency of this transistor?

The typical transition frequency fT is 360 MHz at VCE=-2V and IE=200mA.