ROHM 2SB1695K User Guide
Summary
This NPN BJT transistor, ideal for low-frequency amplifier applications and driver circuits, delivers reliable performance in general electronic systems. The comprehensive manual provides detailed electrical characteristics, including absolute maximum ratings, DC current gain ($h_{FE}$), transition frequency ($f_T$), and precise working curves across various temperatures. It is essential documentation for circuit designers building communication equipment, audio devices, and automated control systems requiring dependable signal amplification.
Page 1 Text Content
2SB1695K
Transistors
Low frequency amplifier 2SB1695K
!Application !External dimensions (Units : mm)
Low frequency amplifier Driver
!Features
1) A collector current is large. 2) VCE(sat) ≤ −370m V At IC =− 1A / IB = −50m A
Each lead has same dimensions
ROHM : SMT3 Abbreviated symbol : FL (1) Emitter
EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector
0~ 0. 10.3Min.
!Absolute maximum ratings (Ta=25°C) !Packaging specifications
Parameter Symbol Limits Unit Package Taping
Collector-base voltage VCBO −30 1. 1.
Code T146
Collector-emitter voltage VCEO −30
Basic ordering unit (pieces) 3000Type
Emitter-base voltage VEBO −6
2SB1695K
IC −1.5
Collector current
ICP −3
Power dissipation PC m W
Junction temperature Tj °C Range of storage temperature Tstg −55~+150 °C ∗Single pulse, PW=1ms
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −30 IC=−10µA
Collector-emitter breakdown voltage BVCEO −30 IC=−1m A
Emitter-base breakdown voltage BVEBO −6 IE=−10µA
Collector cutoff current ICBO −100 n A VCB=−30V Emitter cutoff current IEBO −100 n A VEB=−6V
Collector-emitter saturation voltage VCE(sat) −200 −370 m V IC=−1A, IB=−50m A DC current gain h FE VCE=−2V, IC=−100m A Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz
Corrector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz
∗ Pulsed
Page Summary Contents For ROHM 2SB1695K User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 79.08 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the primary application of this transistor?
It is intended for use as a low frequency amplifier or driver.
What are the rated limits for collector current (ICp)?
The continuous collector current ($I_{Cp}$) has a limit of -3 A, with 200 mW power dissipation.
What must be considered when designing circuits using this device?
Engineers must pay careful attention to peripheral conditions and circuit constants when designing.
What is the typical Collector-emitter saturation voltage (VCE(sat))?
At $I_C = -1 ext{A}$ and $I_B = -50 ext{mA}$, VCE(sat) is $-370 ext{mV}$.