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ROHM 2SB1690 User Guide

Summary

The 2SB1690 is a robust, general-purpose bipolar junction transistor designed for reliable amplification and signal driving applications. This manual provides comprehensive specifications, including absolute maximum ratings, advanced electrical characteristics, and detailed performance curves—covering aspects like DC current gain (hFE), saturation voltage ($V_{CE(sat)}$), and high transition frequency data. It is ideal for engineers developing commercial electronics such as communication devices, audio-visual equipment, and sophisticated industrial appliances that require stable, high-current amplification circuits.

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2SB1690

Transistors

General purpose amplification(−12V, −2A) 2SB1690

Applications External dimensions (Unit : mm) Low frequency amplifier

TSMT3

Deiver

1.0MAX

Features

1) A collector current is large.

2) Collector saturation voltage is low.

VCE(sat) : max. −180m V 0.950.95

at IC= −1A / IB= −50m A

(1) Base (2) Emitter

(3) Collector Each lead has same dimensions

Packaging specifications Package Taping Type Code TL

Basic ordering unit (pieces)

1. 2SB1690 2.

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO −15 Collector-emitter voltage VCEO −12

Emitter-base voltage VEBO −6 IC −2

Collector current

ICP A−4 ∗1

Collector power dissipation PC

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=1ms ∗2 Each terminal mounted on a recommended land ∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC=−10µA Collector-emitter breakdown viltage BVCEO −12 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−10µA Collector cutoff current ICBO −100 n A VCB=−15V Emitter cutoff current IEBO −100 n A VEB=−6V

Collerctor-emitter saturation voltage VCE(sat) −120 −180 m V IC=−1A, IB=−50m A

DC current transfer ratio h FE VCE=−2V, IC=−200m A

Transition frequency f T VCE=−2V, IE=200m A, f=100MHz MHz

Output capacitance Cob p F VCB=−10V, IE=0m A, f=1MHz

Pulsed

Rev.B 1/2

Page Summary Contents For ROHM 2SB1690 User Guide

Page 1 2SB1690 Transistors General purpose amplification(−12V, −2A) 2SB1690 Applications External dimensions (Unit : mm) Low frequency amplifier TSMT3 Deiver 1.0MAX Features 1) A collector current is large. ...
Page 2 IT IN IT :C ib (p LL 2SB1690 IC (A IN h F LL IT :C ob (p Transistors Electrical characteristic curves VCE=−2VTa=100°C IC/IB=20 Ta=25°C PULSED PULSED PULSED −40°C −40°C 25°C IC/IB=50/1 Ta=100°C 0.1 IC/...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 68.77 KB
Published June 21, 2026
8 views

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Frequently Asked Questions

What are the absolute maximum ratings for terminal voltages?

The collector-base voltage (VCBO) limit is -15 V; VCEO is -12 V; and VEBO is -6 V.

How must this component be mounted for proper operation?

It must be mounted on a 25mm×25mm× 0.8mm ceramic substrate.

Is this device suitable for use in high-reliability, life-critical equipment?

Users must consult sales representatives if the application requires extremely high levels of reliability (e.g., medical or aerospace machinery).

What is the maximum collector power dissipation rating?

The specified maximum collector power dissipation (PC) is 1 W.