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Philips Semiconductors PSMN004-25B, PSMN004-25P Data Sheet User Manual

Summary

This document details the PSMN004-25B N-channel logic level TrenchMOS transistor, a high-performance component built with advanced Trench technology. It offers superior efficiency for power applications due to its ultra-low on-state resistance and fast switching capabilities, making it ideal for DC-to-DC converters and switched-mode power supplies (SMPS). This comprehensive manual provides electrical characteristics, absolute maximum ratings, thermal impedance curves, and precise technical guidelines required by power electronics engineers for reliable and efficient circuit design.

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查询PSMN004-25B供应商

Philips Semiconductors Product specification

N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P

FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 25 V • Very low on-state resistance • Fast switching ID = 75 A • Low thermal resistance

RDS(ON) ≤ 4 mΩ (VGS = 10 V) RDS(ON) ≤ 5 mΩ (VGS = 5 V)

GENERAL DESCRIPTION Silicon MAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- d.c. to d.c. converters switched mode power supplies The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN004-25B is supplied in the SOT404 surface mounting package.

PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION

drain1

source

tab drain

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDSS Drain-source voltage Tj = 25 ˚C to 175˚C

VDGR Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ VGS Continuous gate-source ± 16

voltage

VGSM Peak pulsed gate-source Tj ≤ 150 ˚C ± 20

voltage

ID Continuous drain current Tmb = 25 ˚C; VGS = 5 V

Tmb = 100 ˚C; VGS = 5 V

IDM Pulsed drain current Tmb = 25 ˚C PD Total power dissipation Tmb = 25 ˚C Tj, Tstg Operating junction and - 55 ˚C

storage temperature

1 It is not possible to make connection to pin:2 of the SOT404 package 2 maximum continuous current limited by package

January 2000 Rev 1.200

Page Summary Contents For Philips Semiconductors PSMN004-25B, PSMN004-25P Data Sheet User Manual

Page 1 查询PSMN004-25B供应商 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 25...
Page 2 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal ...
Page 3 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specifie...
Page 4 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P Transient thermal impedance, Zth j-mb (K/W) Normalised Power Derating, PD (%) D = tp/...
Page 5 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P Threshold Voltage, VGS(TO) (V) Drain current, ID (A) 2.25 VDS > ID X RDS(ON) maxim...
Page 6 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P Gate-source voltage, VGS (V) Maximum Avalanche Current, IAS (A) ID = 75 A VDD = 15 V ...
Page 7 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-le...
Page 8 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-P...
Page 9 Philips Semiconductors Product specification N-channel logic level Trench MOS transistor PSMN004-25B, PSMN004-25P MOUNTING INSTRUCTIONS Dimensions in mm Fig.18. SOT404 : soldering pattern for surface...

Manual Details

Brand Philips
Pages 9
File Size 101.47 KB
Published July 12, 2026
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Frequently Asked Questions

What is the maximum continuous drain current rating?

The datasheet specifies 75 A as the continuous drain current ($I_D$) at room temperature.

Can I use this transistor in life support systems?

No, these products are explicitly stated not to be designed for use in life support appliances or systems.

Is there a restriction regarding the SOT404 package pins?

Yes, it is impossible to make connection to pin 2 of the SOT404 package.

What core technology achieves low resistance?

The device uses Philips Trench technology to achieve the lowest possible on-state resistance.