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ON MC34152, MC33152, NCV33152 High-Speed Dual MOSFET Drivers Data Manual

Summary

These high-speed dual noninverting drivers are purpose-built to interface low-current digital logic signals with demanding power loads. They feature superior performance for driving large capacitive loads, supporting applications in switching power supplies, motor controllers, and DC-to-DC converters. The technical manual provides comprehensive coverage of electrical characteristics, including detailed input/output specifications, package options (SOIC, PDIP), maximum ratings, and specialized suffixes—including automotive versions—making it a vital resource for power electronics design engineers.

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查询MC33152DR2供应商

MC34152, MC33152, NCV33152

High Speed Dual MOSFET Drivers The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current digital http://onsemi.com signals to drive large capacitive loads with high slew rates. These devices feature low input current making them CMOS/LSTTL logic compatible, input hysteresis for fast output switching that is

MARKING

independent of input transition time, and two high current totem pole DIAGRAMS outputs ideally suited for driving power MOSFETs. Also included is an undervoltage lockout with hysteresis to prevent system erratic operation at low supply voltages.

PDIP−8 MC3x152P

Typical applications include switching power supplies, dc−to−dc

P SUFFIX AWL

converters, capacitor charge pump voltage doublers/inverters, and CASE 626 YYWW

motor controllers. This device is available in dual−in−line and surface mount packages. Features

SOIC−8 3x152

Pb−Free Packages are Available

D SUFFIX

Two Independent Channels with 1.5 A Totem Pole Outputs CASE 7511 Output Rise and Fall Times of 15 ns with 1000 p F Load CMOS/LSTTL Compatible Inputs with Hysteresis

= 3 or 4

Undervoltage Lockout with Hysteresis

= Assembly Location

Low Standby Current

WL, L = Wafer Lot Efficient High Frequency Operation YY, Y = Year WW, W = Work Week

Enhanced System Performance with Common Switching Regulator Control ICs NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes PIN CONNECTIONS

N.C.N.C. Drive Output ALogic Input A VCCGND

Drive Output BLogic Input B

Drive Output A

Logic

Input A (Top View)

ORDERING INFORMATION See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Drive Output B

Logic Input B

Figure 1. Representative Diagram

Semiconductor Components Industries, LLC, 2004 Publication Order Number: October, 2004 − Rev. 7 MC34152/D

Page Summary Contents For ON MC34152, MC33152, NCV33152 High-Speed Dual MOSFET Drivers Data Manual

Page 1 查询MC33152DR2供应商 MC34152, MC33152, NCV33152 High Speed Dual MOSFET Drivers The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current d...
Page 2 MC34152, MC33152, NCV33152 MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage VCC Logic Inputs (Note 1) Vin −0.3 to +VCC Drive Outputs (Note 2) Totem Pole Sink or Source Current IO 1.5 Diod...
Page 3 MC34152, MC33152, NCV33152 ELECTRICAL CHARACTERISTICS (VCC = 12 V, for typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Note 3], unless otherwis...
Page 4 MC34152, MC33152, NCV33152 IV AT IO LA ns in , I LH (I n/ ut ), D Drive Output Logic Input CL Logic Input tr, tf ≤ 10 ns t PHL t PLH 10% Drive Output tr tf Figure 2. Switching Characteristics Test CIr...
Page 5 MC34152, MC33152, NCV33152 High State Clamp (Drive sa IO LT VCC = 12 V Output Driven Above VCC) VCC = 12 V Vin = 0 V to 5.0 V 90% − 80 s Pulsed Load CL = 1.0 n F 2.0 TA = 25°C 120 Hz Rate TA = 25°C D...
Page 6 MC34152, MC33152, NCV33152 , S LY −t f, IS -F LL IM (n s) VCC = 12 V VCC = 12 V Both Logic Inputs Driven VIN = 0 V to 5.0 V 0 V to 5.0 V TA = 25°C 50% Duty Cycle Both Drive Outputs Loaded f = 200 k Hz...
Page 7 MC34152, MC33152, NCV33152 the NPN pullup during the negative output transient, power aid in this calculation, power MOSFET manufacturers dissipation at high frequencies can become excessive. provide ...
Page 8 MC34152, MC33152, NCV33152 LAYOUT CONSIDERATIONS High frequency printed circuit layout techniques are performance, it is recommended that the initial circuit imperative to prevent excessive output rin...
Page 9 MC34152, MC33152, NCV33152 Charge Removal C1 Rg(on) Rg(off) In noise sensitive applications, both conducted and radiated EMI can The totem−pole outputs can furnish negative base current for be reduced...
Page 10 MC34152, MC33152, NCV33152 PACKAGE DIMENSIONS PDIP−8 CASE 626−05 ISSUE L NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). −B− 3. DIM...
Page 11 MC34152, MC33152, NCV33152 PACKAGE DIMENSIONS SOIC−8 D SUFFIX CASE 751−07 ISSUE AC NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AN...
Page 12 MC34152, MC33152, NCV33152 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any ...