MOTOROLA MTW16N40E Data Sheet

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SEMICONDUCTOR TECHNICAL DATA by MTW16N40E/D

Motorola Preferred Device

TMOS POWER FET

N–Channel Enhancement–Mode Silicon Gate 16 AMPERES

400 VOLTS

This high voltage MOSFET uses an advanced termination

RDS(on) = 0.24 OHM

scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

CASE 340K–01, Style 1

Diode is Characterized for Use in Bridge Circuits

TO–247AE

IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain–Source Voltage VDSS Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR Vdc Gate–Source Voltage — Continuous VGS Vdc

— Non–Repetitive (tp ≤ 10 ms) VGSM Vpk

Drain Current — Continuous ID Adc

— Continuous @ 100°C ID 9.0 — Single Pulse (tp ≤ 10 µs) IDM Apk

Total Power Dissipation PD Watts Derate above 25°C 1.4 W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 100 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 6.8 m H, RG = 25 Ω) Thermal Resistance — Junction to Case RθJC 0.70 °C/W

— Junction to Ambient RθJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1996