MOTOROLA MRF175LU Data Sheet

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SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D

The RF MOSFET Line

N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters

100 W, 28 V, 400 MHz

for FM broadcast or TV channel frequency bands.

N–CHANNEL

Guaranteed Performance BROADBAND

MRF175LU @ 28 V, 400 MHz (“U” Suffix) RF POWER FETs

Output Power — 100 Watts Power Gain — 10 d B Typ Efficiency — 55% Typ MRF175LV @ 28 V, 225 MHz (“V” Suffix) Output Power — 100 Watts Power Gain — 14 d B Typ Efficiency — 65% Typ 100% Ruggedness Tested At Rated Output Power Low Thermal Resistance Low Crss — 20 p F Typ @ VDS = 28 V

CASE 333–04, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDSS Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID Adc Total Device Dissipation @ TC = 25°C PD Watts Derate above 25°C 1.54 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RθJC 0.65 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0, ID = 50 m A) Zero Gate Voltage Drain Current IDSS 2.5 m Adc (VDS = 28 V, VGS = 0) Gate–Body Leakage Current IGSS 1.0 µAdc (VGS = 20 V, VDS = 0)

(continued)

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 8

 Motorola, Inc. 1997 MRF175LU MRF175LVMOTOROLA RF DEVICE DATA