MOTOROLA MPS4250 Data Sheet

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SEMICONDUCTOR TECHNICAL DATA by MPS4250/D

PNP Silicon

COLLECTOR

EMITTER

MAXIMUM RATINGS

CASE 29–04, STYLE 1

Rating Symbol Value Unit

TO–92 (TO–226AA)

Collector–Emitter Voltage VCEO –40 Vdc Collector–Emitter Voltage VCES –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC m Adc Total Device Dissipation @ TA = 25°C PD m W Derate above 25°C 5.0 m W/°C Total Device Dissipation @ TC = 25°C PD 1.5 m W Derate above 25°C m W/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CES –40 Vdc (IC = –5.0 m A) Collector–Emitter Sustaining Voltage(1) V(BR)CEO(sus) –40 Vdc (IC = –5.0) Collector–Base Breakdown Voltage V(BR)CBO –40 Vdc (IC = –10
A) Emitter–Base Breakdown Voltage V(BR)EBO –5.0 Vdc (IE = –10
A) Collector Cutoff Current ICBO (VCB = –50 V) –10 n A (VCB = –40 V, TA = 65°C) –3.0 Emitter Cutoff Current IEBO –20 n A (VEB = –3.0 V)

1. Pulse Test: Pulse Width = 300
s; Duty Cycle = 2.0%.

1Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996