MOTOROLA MMSF7P03HD Data Sheet
Summary
Discover power efficiency for demanding electronics with this advanced TMOS Power MOSFET family. Designed for low voltage, high-speed switching, these components are perfect for applications requiring extended battery life, such as DC-DC converters in portable devices, computers, and motor controls. This manual provides engineering professionals with comprehensive technical data—including electrical characteristics, thermal ratings, and maximum power limits—enabling precise circuit design for optimal performance and energy savings.
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SEMICONDUCTOR TECHNICAL DATA by MMSF7P03HD/D
Medium Power Surface Mount Products
Motorola Preferred Device
SINGLE TMOS
Single HDTMOS are an advanced series of power MOSFETs
POWER MOSFET
which utilize Motorola’s High Cell Density TMOS process.
30 VOLTS
HDTMOS devices are designed for use in low voltage, high speed
RDS(on) = 35 m
switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs
CASE 751–05, Style 13
Miniature SO–8 Surface Mount Package — Saves Board Space SO–8 Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–to–Source Voltage VDSS Vdc Gate–to–Source Voltage — Continuous VGS Vdc Drain Current — Continuous @ TA = 25°C ID 7.0 Adc
Drain Current — Single Pulse (tp ≤ 10 µs) IDM Apk
Source Current — Continuous @ TA = 25°C IS 2.3 Adc Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C EAS m J (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 m H, RG = 25 ) Thermal Resistance — Junction–to–Ambient RθJA °C/W Maximum Temperature for Soldering °C DEVICE MARKING S7P03 (1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)
ORDERING INFORMATION
Device Reel Size Tape Width Quantity MMSF7P03HDR2 13″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
REV 2
1Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
Page Summary Contents For MOTOROLA MMSF7P03HD Data Sheet
Manual Details
| Brand | Motorola |
|---|---|
| Pages | 10 |
| File Size | 214.71 KB |
| Published | June 04, 2026 |
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Frequently Asked Questions
What type of applications are HDTMOS devices best suited for?
They are ideal for low voltage, high speed switching in dc–dc converters and general power management systems in battery-powered products like computers and cellular phones.
What is the recommended maximum junction temperature for SO–8 package use?
The thermal resistance specifies a Junction-to-Ambient (RthJA) of 50 °C/W, with a Maximum Temperature for Soldering at 260 °C.
Does this MOSFET support logic level control?
Yes, it features Logic Level Gate Drive and can be driven by Logic ICs.
What is the continuous drain current capacity (Idc)?
The continuous drain current (Idc) listed for T = 25°C is 7.0 Adc.