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MOTOROLA MMSF7P03HD Data Sheet

Summary

Discover power efficiency for demanding electronics with this advanced TMOS Power MOSFET family. Designed for low voltage, high-speed switching, these components are perfect for applications requiring extended battery life, such as DC-DC converters in portable devices, computers, and motor controls. This manual provides engineering professionals with comprehensive technical data—including electrical characteristics, thermal ratings, and maximum power limits—enabling precise circuit design for optimal performance and energy savings.

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SEMICONDUCTOR TECHNICAL DATA by MMSF7P03HD/D

Medium Power Surface Mount Products

Motorola Preferred Device

SINGLE TMOS

Single HDTMOS are an advanced series of power MOSFETs

POWER MOSFET

which utilize Motorola’s High Cell Density TMOS process.

30 VOLTS

HDTMOS devices are designed for use in low voltage, high speed

RDS(on) = 35 m

switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs

CASE 751–05, Style 13

Miniature SO–8 Surface Mount Package — Saves Board Space SO–8 Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided

Source Drain

Source Drain

Source Drain

Gate Drain

Top View

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain–to–Source Voltage VDSS Vdc Gate–to–Source Voltage — Continuous VGS Vdc Drain Current — Continuous @ TA = 25°C ID 7.0 Adc

Drain Current — Single Pulse (tp ≤ 10 µs) IDM Apk

Source Current — Continuous @ TA = 25°C IS 2.3 Adc Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C EAS m J (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 m H, RG = 25 ) Thermal Resistance — Junction–to–Ambient RθJA °C/W Maximum Temperature for Soldering °C DEVICE MARKING S7P03 (1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)

ORDERING INFORMATION

Device Reel Size Tape Width Quantity MMSF7P03HDR2 13″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

REV 2

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

Page Summary Contents For MOTOROLA MMSF7P03HD Data Sheet

Page 1 Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7P03HD/D Medium Power Surface Mount Products Motorola Preferred Device SINGLE TMOS Single HDTMOS are an advanced series of power MOSFETs POWER M...
Page 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (1) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 0.25 m Ad...
Page 3 TYPICAL ELECTRICAL CHARACTERISTICS S( on AI –T –S ES IS TA AI –T –S ES IS TA (O S) , D AI EN (A PS S( on (N AL IZ ED 10 V 3.9 V TJ = 25°C 3.7 V 6.0 V 3.5 V VDS ≥ 10 V 8.0 VGS = 3.3 V 8.0 2.5 V TJ = – ...
Page 4 POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted The capacitance (Ciss) is read from the capacitance curve at by recognizing that the power MOSFET is charge controlled. a...
Page 5 TJ = 25°C 6.0 ID = 7.0 A , G AT E– TO –S VO LT AG (V LT S) VDD = 15 V td(off) 5.0 VGS = 10 V Q1 Q2 VGS td(on) TJ = 25°C ID = 7.0 A VDS , S EN (A PS QG, TOTAL GATE CHARGE (n C) RG, GATE RESISTANCE (OHM...
Page 6 di/dt = 300 A/µs Standard Cell Density , D AI EN (A PS High Cell Density trr , S EN t, TIME Figure 11. Reverse Recovery Time (trr) SAFE OPERATING AREA The Forward Biased Safe Operating Area curve (Fig...
Page 7 TYPICAL ELECTRICAL CHARACTERISTICS th ja (t) , E FF EC TI VE AN SI EN 1.0 D = 0.5 TH ER AL ES IS TA Chip Junction Ambient SINGLE PULSE t, TIME (s) Figure 14. Thermal Response di/dt ta tb tp 0.25 IS Fi...
Page 8 INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total between the board and ...
Page 9 TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control line on the graph shows the actual temperature that might be settings that will give the desired heat patte...
Page 10 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 ...

Manual Details

Brand Motorola
Pages 10
File Size 214.71 KB
Published June 04, 2026
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Frequently Asked Questions

What type of applications are HDTMOS devices best suited for?

They are ideal for low voltage, high speed switching in dc–dc converters and general power management systems in battery-powered products like computers and cellular phones.

What is the recommended maximum junction temperature for SO–8 package use?

The thermal resistance specifies a Junction-to-Ambient (RthJA) of 50 °C/W, with a Maximum Temperature for Soldering at 260 °C.

Does this MOSFET support logic level control?

Yes, it features Logic Level Gate Drive and can be driven by Logic ICs.

What is the continuous drain current capacity (Idc)?

The continuous drain current (Idc) listed for T = 25°C is 7.0 Adc.