MOTOROLA MMSF7P03HD Data Manual (1) User Guide
Summary
Discover this single TMOS Power MOSFET solution, engineered for high power efficiency in low-voltage, high-speed switching applications. This manual provides comprehensive technical data, including electrical characteristics, maximum ratings, and thermal specifications. It is designed for electronics engineers building portable, battery-powered systems such as dc–dc converters, computers, printers, and cellular communication devices requiring a reliable, miniature SO–8 package.
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SEMICONDUCTOR TECHNICAL DATA by MMSF7P03HD/D
Medium Power Surface Mount Products
Motorola Preferred Device
SINGLE TMOS
Single HDTMOS are an advanced series of power MOSFETs
POWER MOSFET
which utilize Motorola’s High Cell Density TMOS process.
30 VOLTS
HDTMOS devices are designed for use in low voltage, high speed
RDS(on) = 35 m
switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs
CASE 751–05, Style 13
Miniature SO–8 Surface Mount Package — Saves Board Space SO–8 Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–to–Source Voltage VDSS Vdc Gate–to–Source Voltage — Continuous VGS Vdc Drain Current — Continuous @ TA = 25°C ID 7.0 Adc
Drain Current — Single Pulse (tp ≤ 10 µs) IDM Apk
Source Current — Continuous @ TA = 25°C IS 2.3 Adc Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C EAS m J (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 m H, RG = 25 ) Thermal Resistance — Junction–to–Ambient RθJA °C/W Maximum Temperature for Soldering °C DEVICE MARKING S7P03 (1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)
ORDERING INFORMATION
Device Reel Size Tape Width Quantity MMSF7P03HDR2 13″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
REV 2
1Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
Page Summary Contents For MOTOROLA MMSF7P03HD Data Manual (1) User Guide
Manual Details
| Brand | Motorola |
|---|---|
| Pages | 10 |
| File Size | 216.45 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What is the maximum drain current (Adc) for this device?
The continuous drain current (Idc) at 25°C is 7.0 Adc.
What voltage range should I use with logic ICs?
It can be driven by Logic ICs and operates up to ±20 Vdc on the gate-to-source circuit.
How resistant is the device to high temperatures?
The operating temperature range (Tj) is -55 to 150 °C.
Is this device suitable for low voltage applications?
Yes, it is designed for use in low voltage, high speed switching applications like dc–dc converters.