MOTOROLA MMSF3300 Data Sheet (1) User Manual

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SEMICONDUCTOR TECHNICAL DATA by MMSF3300/D

!  Power Surface Mount Products

SINGLE TMOS POWER MOSFET 30 VOLTS Wave FET devices are an advanced series of power MOSFETs which utilize Motorola’s RDS(on) = 12.5 m

latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Wave FET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the CASE 751–06, Style 12 guesswork in designs where inductive loads are switched and offer additional safety margin SO–8 against unexpected voltage transients. Characterized Over a Wide Range of Power Ratings Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications Source Drain Logic Level Gate Drive — Can Be Driven by Source

Drain

Logic ICs

Source Drain

Diode Is Characterized for Use In Bridge Circuits

Gate Drain

Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature TOP VIEW Avalanche Energy Specified Miniature SO–8 Surface Mount Package — Saves Board Space

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Parameter Symbol Value Unit

Drain–to–Source Voltage VDSS Vdc Drain–to–Gate Voltage VDGR Vdc Gate–to–Source Voltage VGS ±20 Vdc Gate–to–Source Operating Voltage VGS ±16 Vdc Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 m H, IL(pk) = 7.3 A, VDS = 30 Vdc)

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF3300R2 13″ 12 mm embossed tape 2500 units

This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS and Wave FET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

REV 2

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997