Motorola MCR218 Series Data Sheet User Manual

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SEMICONDUCTOR TECHNICAL DATA by MCR218/D

Silicon-Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.

SCRs Glass-Passivated Junctions 8 AMPERES RMS Blocking Voltage to 800 Volts 200 thru 800 VOLTS

TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and Durability

CASE 221A-09 (TO-220AB) STYLE 3

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit

Peak Repetitive Forward and Reverse Voltage(1) VDRM Volts (TJ = 25 to 125°C, Gate Open) MCR218–4 VRRM

MCR218–6 MCR218–8 MCR218–10

Forward Current RMS IT(RMS) Amps (All Conduction Angles) Peak Forward Surge Current ITSM Amps (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations I2t A2s (t = 8.3 ms) Forward Peak Gate Power PGM Watts Forward Average Gate Power PG(AV) 0.5 Watt Forward Peak Gate Current IGM Amps Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

REV 1

1Motorola Thyristor Device Data

 Motorola, Inc. 1999