MOTOROLA MMSF10N03Z Data Sheet User Guide

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SEMICONDUCTOR TECHNICAL DATA by MMSF10N03Z/D

Medium Power Surface Mount Products

Motorola Preferred Device

SINGLE TMOS EZFETs are an advanced series of power MOSFETs which utilize POWER MOSFET Motorola’s High Cell Density TMOS process and contain monolithic 10 AMPERES back–to–back zener diodes. These zener diodes provide protection 30 VOLTS against ESD and unexpected transients. These miniature surface mount RDS(on) = 13 m

MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commuta- tion modes and the drain–to–source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and

CASE 751–05, Style 12

cordless phones. They can also be used for low voltage motor controls in

mass storage products such as disk drives and tape drives. Zener Protected Gates Provide Electrostatic Discharge Protection Designed to Withstand 200 V Machine Model and 2000 V Human Body Model Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

Source Drain

Logic Level Gate Drive — Can Be Driven by Logic ICs

Source Drain

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Is Characterized for Use In Bridge Circuits Source Drain

Diode Exhibits High Speed, With Soft Recovery Gate Drain IDSS Specified at Elevated Temperature

Top View

Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Max Unit

Drain–to–Source Voltage VDSS Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR Vdc Gate–to–Source Voltage — Continuous VGS Vdc Drain Current — Continuous @ TA = 25°C (1) ID Adc

Drain Current — Continuous @ TA = 70°C (1) ID 7.7 Drain Current — Pulsed Drain Current (3) IDM

Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts

Linear Derating Factor @ TA = 25°C (1) m W/°C

Total Power Dissipation @ TA = 25°C (2) PD 1.6 Watts

Linear Derating Factor @ TA = 25°C (2) m W/°C

Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 m H, RG = 25
) THERMAL RESISTANCE

Parameter Symbol Typ Max Unit

Junction–to–Ambient (1) RJA °C/W Junction–to–Ambient (2) (1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds). (2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State). (3) Repetitive rating; pulse width limited by maximum junction temperature. DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF10N03ZR2 13″ 12 mm embossed tape 2500 units

This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value.

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997