Motorola MCR102 MCR103 Data Sheet User Guide

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SEMICONDUCTOR TECHNICAL DATA by MCR102/D

Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA

package which is readily adaptable for use in automatic insertion equipment.

0.8 AMPERES RMS

Sensitive Gate Trigger Current — 200 µA Maximum

30 and 60 VOLTS

Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 85°C Low Holding Current — 5 m A Maximum Passivated Surface for Reliability and Uniformity

CASE 29-04 (TO-226AA) STYLE 10

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit

Peak Repetitive Forward and Reverse Blocking Voltage(2) VDRM Volts

(TC = + 85°C, RGK = 1 kΩ) MCR102 VRRM

MCR103

Forward Current RMS (See Figures 1 & 2) IT(RMS) 0.8 Amps (All Conduction Angles) Peak Forward Surge Current, TA = 25°C ITSM Amps (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations I2t 0.415 A2s (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C PGM 0.1 Watt Average Gate Power — Forward, TA = 25°C PGF(AV) 0.01 Watt Peak Gate Current — Forward, TA = 25°C IGFM Amp (300 µs, 120 PPS) Peak Gate Voltage — Reverse VGRM Volts Operating Junction Temperature Range @ Rated VRRM and VDRM TJ –40 to +85 °C Storage Temperature Range Tstg –40 to +150 °C Lead Solder Temperature + 230 °C (
1/16
from case, 10 s max) 1. Temperature reference point for all case temperature is center of flat portion of package. (TC = +85°C unless otherwise noted.) 2. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the rated blocking voltage.

1Motorola Thyristor Device Data

 Motorola, Inc. 1995