Motorola MCM67J618B Data Sheet
Summary
Elevate your system's core performance with this high-density synchronous Static RAM (SRAM) memory module, designed as a robust secondary cache for advanced microprocessor applications. This technical manual provides comprehensive details on integrating powerful features like burst mode operation, dual byte write enables, and optimized pipelined data handling. It is essential reading for hardware engineers designing wide-bus systems that require reliable, high-speed caching solutions.
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SEMICONDUCTOR TECHNICAL DATA by MCM67J618B/D
MCM67J618B
Product Preview 64K x 18 Bit Burst RAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67J618B is a 1,179,648 bit synchronous static random access
memory designed to provide a burstable, high–performance, secondary cache FN PACKAGE for the i486 and Pentium microprocessors. It is organized as 65,536 words PLASTIC CASE 778–02
of 18 bits, fabricated with Motorola’s high–performance silicon–gate Bi CMOS technology. The device integrates input registers, a 2–bit counter, high speed SRAM, and high drive registered output drivers onto a single monolithic circuit for reduced parts count implementation of cache data RAM applications. Syn-
PIN NAMES
chronous design allows precise cycle control with the use of an external clock (K).
Bi CMOS circuitry reduces the overall power consumption of the integrated func- A0 – A15 Address Inputs. . . . . . . . . . . . . . . .
tions for greater reliability. Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ADV Burst Address Advance. . . . . . . . . . . .
Addresses (A0 – A15), data inputs (D0 – D17), and all control signals except
LW Lower Byte Write Enable. . . . . . . . . . . .
output enable (G) are clock (K) controlled through positive–edge–triggered non-
UW Upper Byte Write Enable. . . . . . . . . . . .
inverting registers.
ADSC Controller Address Status. . . . . . . . .
This device contains output registers for pipeline operations. At the rising edge
ADSP Processor Address Status. . . . . . . . .
of K, the RAM provides the output data from the previous cycle.
Chip Enable. . . . . . . . . . . . . . . . . . . . . . . . .
Output enable (G) is asynchronous for maximum system design flexibility. Output Enable. . . . . . . . . . . . . . . . . . . . . . Burst can be initiated with either address status processor (ADSP) or address DQ0 – DQ17 Data Input/Output. . . . . . . . . .
status cache controller (ADSC) input pins. Subsequent burst addresses can be VCC 5 V Power Supply. . . . . . . . . . . . . . . . generated internally by the MCM67J618B (burst sequence imitates that of the VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . .
i486) and controlled by the burst address advance (ADV) input pin. The following
All power supply and ground pins must be
pages provide more detailed information on burst controls. A6
connected for proper operation of the device.
Write cycles are internally self–timed and are initiated by the rising edge of the A7
clock (K) input. This feature eliminates complex off–chip write pulse generation A3 A2
and provides increased flexibility for incoming signals.
A1 LW
Dual write enables (LW and UW) are provided to allow individually writeable PIN ASSIGNMENT
A0 SC
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17
SA5 AD SP
(the upper bits).
This device is ideally suited for systems that require wide data bus widths and
cache memory. See Figure 2 for applications information.
A1 GAD
8DQ9 DQ8
Single 5 V ± 5% Power Supply A1 A8
DQ10 DQ7
Fast Access Time/Fast Cycle Time = 5 ns/100 MHz, 7 ns/80 MHz A1 A9
VCC DQ6
Byte Writeable via Dual Write Enables VSS VCC Internal Input Registers (Address, Data, Control) DQ11 VSS DQ12 DQ5
Output Registers for Pipelined Applications
DQ13 DQ4
Internally Self–Timed Write Cycle
DQ14 DQ3
ADSP, ADSC, and ADV Burst Control Pins
VSS DQ2
Asynchronous Output Enable Controlled Three–State Outputs VCC
Common Data Inputs and Data Outputs DQ15 VCC
3.3 V I/O Compatible DQ16 DQ1 DQ17 DQ0
High Board Density 52–Lead PLCC Package ADSP Disabled with Chip Enable (E) — Supports Address Pipelining
Burst RAM is a trademark of Motorola, Inc. i486 and Pentium are trademarks of Intel Corp. This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.
MOTOROLA FAST SRAM Motorola, Inc. 1996 MCM67J618B
Page Summary Contents For Motorola MCM67J618B Data Sheet
Manual Details
| Brand | Motorola |
|---|---|
| Pages | 12 |
| File Size | 203.72 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What is the function of the ADV pin?
The ADV (Address Advance) input initiates subsequent burst addresses. This feature, combined with ADSC or ADSP, controls the duration and start of a write burst.
How does the device manage data writes?
Write cycles are internally self-timed and initiated by the rising edge of the K clock. Dual enable pins (LW and UW) allow for individually writeable bytes.
What is the pinout compatibility for this SRAM?
It features 3.3V I/O compatible inputs and outputs, making it suitable for modern system designs.
Is external clocking required for operation?
The device utilizes an external clock (K) input to allow precise cycle control, ensuring the reliable operation of the synchronous design.