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Infineon TLE6282G Dual Half Bridge Driver IC Specifications

Summary

Optimize power control with this dual half-bridge driver IC, designed for advanced MOSFET power stages requiring robust management. This manual details comprehensive functionality, including adjustable dead time, short circuit detection, and undervoltage protection tailored for high reliability in extreme conditions. It is ideally suited for automotive systems, specifically motor bridges, injector, and valve applications powering 12V, 24V, and 48V networks.

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Data Sheet TLE6282G

Dual Half Bridge Driver IC Features Product Summary • Compatible to very low ohmic normal

Turn on current IGxx(on) 850 m A

level input N-Channel MOSFETs

Turn off current IGxx(off) 580 m A

• Separate input for each MOSFET

Supply voltage range VVs 7.5 … 60 V

• PWM frequency up to 50 k Hz

Gate Voltage VGS 10 V

• Operates down to 7.5V

Temperature range TJ -40...+150 °C

supply voltage • Low EMC sensitivity and emission • Adjustable dead time with shoot through protection • Deactivation of dead time and shoot through protection possible • Short circuit protection for each Mosfet • Driver undervoltage shut down • Reverse polarity protection for the driver IC • Disable function • Input with TTL characteristics • 1 bit diagnosis • Integrated bootstrap diodes

P-DSO 20

Application • Dedicated for DC-brush high current motor bridges in PWM control mode and adapted for use in injector and valve applications for 12, 24 and 42V powernet applications. Useable as four fold lowside driver for unipolar 4 phase motor drives. • The two half bridges can operate independently. The two half bridges can even operate at different supply voltages.

General Description Dual half bridge driver IC for MOSFET power stages with multiple protection functions.

Block Diagram Charge Pump

Linear

Regulator

VS BH2

Floating HS Driver 1

VGS limitation HS1

INH GH1

Short circuit

detect.

Undervoltage

IH1 HS1

Floating HS Driver 2

Input control DH2

IL1 LS1

VGS limitation HS2

IH2 HS2

Level Short circuit

Dead time detect.

IL2 LS2

Undervoltage

DT/DIS

Floating LS Driver 1

VGS limitation LS1 GL1

Undervoltage HSx

OR Shift

Undervoltage LSx Short circuit

Undervoltage SCD

detect.

Short Circuit Detection

Short circuit Detect.

Undervoltage

DL2Floating LS Driver 2 VGS limitation LS2 GL2

Short circuit

detect.

Undervoltage

1 Rev 2.2 2006-03-07

Page Summary Contents For Infineon TLE6282G Dual Half Bridge Driver IC Specifications

Page 1 Data Sheet TLE6282G Dual Half Bridge Driver IC Features Product Summary • Compatible to very low ohmic normal Turn on current IGxx(on) 850 m A level input N-Channel MOSFETs Turn off current IGxx(off) ...
Page 2 Data Sheet TLE6282G Application Block Diagram – Injector / Valve Drive Watchdog Reset VS=12V CQ CD CS 22µF 47n F 47µF VCC VSWD BH1 CB ER1 GH1 RQ 220n F Load 1 Load 2 IH2 GL2 This application diagram s...
Page 3 Data Sheet TLE6282G DT/DIS GL2 ERR SH2 IH1 GH2 IL1 BH2 IH2 DH2 TLE6282G DH1 IL2 BH1 GND VS GH1 DL2 SH1 DL1 GL1 Pin Symbol Function 1 DT/DIS a) Set adjustable dead time by external resistor b) Deactiva...
Page 4 Data Sheet TLE6282G Maximum Ratings at Tj=-40…+150°C unless specified otherwise Parameter Symbol Limits Values Unit Supply voltage 1 VS -4 60 Operating temperature range Tj -40 °C Storage temperature ...
Page 5 Data Sheet TLE6282G Max. voltage range at DLx3 VDLx -7 75 V Max. voltage range at GLx VGLx -2 12 Max. voltage difference BHx - SHx VBHx-VSHx -0.3 12 Max. voltage difference GHx – SHx; GLx VGxx-VSxx -0...
Page 6 Data Sheet TLE6282G Dynamic characteristics (pls. see test circuit and timing diagram) Turn on current @ VGxx -VSxx = 0V; Tj=25°C IGxx(on) -- m A @ VGxx -VSxx = 4V; Tj=125°C @ CLoad=22n F; RLoad=0Ω Tu...
Page 7 Data Sheet TLE6282G Test Circuit and Timing Diagram R load = 1 Ohm C load = 10 n F VGHX_C t P(IHN) t P(IHF) trise tfall GHX_CV 90% R load = 1 Ohm C load = 10 n F VGLX_C t P(ILN) t P(ILF) trisetfall GL...
Page 8 Data Sheet TLE6282G Remarks: Default status of input pins: To assure a defined status of all input pins in case of disconnection, these pins are internally secured by pull up / pull down current sourc...
Page 9 Data Sheet TLE6282G pins (voltage devider network, pls. see Application block diagram on pg. 2) t WAIT ≈ 3 x CBx x 2 x R, whereas R = 10 kΩ • Enable the Driver IC via DT/DIS pin • Start the operation ...
Page 10 Data Sheet TLE6282G SS (W the impedance of the internal bootstrap diode and the capacitor formed by the external Mos- fet (CMosfet=QGate / VGS). The size of the bootstrap capacitor has to be adapted t...
Page 11 Data Sheet TLE6282G Gate Drive characteristics Logic i Gxx(on) 850 m A Peak Level DHx SCD Shift i Gxx(on) VGS GHx limit i Gxx(off) i GHx VIHx i Gxx(off) 580 m A Peak Under voltage TLE6282G i GHx High ...
Page 12 Data Sheet TLE6282G Truth Table Input Conditions Output ILx IHx DT / DIS UV SC GLx GHx ERR A) stays in the condition before the shoot throught command occurs (see also dead time diagrams) B) 0 when af...
Page 13 Data Sheet TLE6282G Package and Ordering Code (all dimensions in mm) Package Code P-DSO 20 13 Rev 2.2 2006-03-07
Page 14 Data Sheet TLE6282G Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The infor...

Manual Details

Brand Dual
Pages 14
File Size 234.92 KB
Published May 28, 2026
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Frequently Asked Questions

What types of applications is the TLE6282G designed for?

It is primarily intended for DC-brush high current motor bridges, and it can also be used in injector and valve applications for various powernets (12, 24, or 42V).

How can I adjust or disable the dead time control?

The DT/DIS pin allows setting adjustable dead time using an external resistor, or enabling deactivation by connecting it to 0V.

What is the acceptable supply voltage range for this IC?

The general system supply voltage (Vs) operates within a range of 7.5 V to 60 V.

Is there a way to modify the Short Circuit Detection (SCD) sensitivity?

Yes, using voltage divider networks across the MOSFETs allows you to increase the SCD current limit threshold for both high and low side switches.