Fairchild FQP6N40C FQPF6N40C User Manual
Summary
This technical guide features specifications for high-performance N-Channel MOSFETs, designed for efficient power management in applications like switched mode power supplies and electronic lamp ballasts. Leveraging advanced DMOS technology, these devices offer fast switching capabilities, low on-state resistance, and excellent avalanche performance. The manual provides comprehensive data, including absolute maximum ratings, detailed electrical characteristics (e.g., $R_{DS(on)}$ and $Q_G$), thermal data, and usage guidelines necessary for electrical engineers and designers implementing high-efficiency power electronics.
Page 1 Text Content
FQ P6N 40C /FQ PF6N 40C
FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 16n C) planar stripe, DMOS technology. Low Crss ( typical 15p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP6N40C FQPF6N40C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 6 *
- Continuous (TC = 100°C) 3.6 3.6 *
IDM Drain Current - Pulsed (Note 1) 24 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 7.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.58 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FQP6N40C FQPF6N40C Units RθJC Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
Page Summary Contents For Fairchild FQP6N40C FQPF6N40C User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 867.92 KB |
| Published | June 06, 2026 |
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