Fairchild FDC602P User Manual
Summary
This specialized P-Channel 2.5V PowerTrench MOSFET is engineered for demanding power management tasks, making it ideal for applications such as battery protection, load switching, and sophisticated battery management systems. The comprehensive technical manual provides detailed electrical characteristics, including low $R_{DS(ON)}$, fast switching times, and thermal performance data across extreme operating temperatures. This resource is essential for engineers designing high-efficiency circuits that require reliable power control and minimized energy loss.
Page 1 Text Content
April 2001
FDC602P P-Channel 2.5V Power Trench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged
• –5.5 A, –20 V RDS(ON) = 35 mΩ @ VGS = –4.5 V
gate version of Fairchild’s advanced Power Trench
RDS(ON) = 50 mΩ @ VGS = –2.5 V
process. It has been optimized for power management applications with a wide range of gate drive voltage
• Fast switching speed
• High performance trench technology for extremely
Applications
low RDS(ON)
• Battery management • Load switch • Battery protection
Super SOT -6TM
Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –5.5 A – Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .602 FDC602P 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation FDC602P Rev C(W)
Page Summary Contents For Fairchild FDC602P User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 65.26 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What are the absolute maximum voltage limits for this MOSFET?
The Drain-Source Voltage (VDS) is rated up to -20 V, and the Gate-Source Voltage (VGS) is rated at ±12 V.
What are the key features of this PowerTrench MOSFET?
It offers fast switching speed, low R_DS(ON), and high performance trench technology for power management applications.
How is the thermal resistance calculated?
R is the sum of the junction-to-case (qJC) and case-to-ambient (qCA) resistance, where qJA accounts for heatsinking on an FR-4 board.
What are typical applications for this device?
It is optimized for power management in areas like battery management, load switches, and battery protection.