# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Fairchild FDB2572 FDP2572 User Manual

Summary

This N-Channel PowerTrench MOSFET is a high-performance switching component designed for robust power conversion applications. Essential for engineers building sophisticated systems such as DC/DC converters, Off-Line UPS units, and Distributed Vertical Regulator Modules (VRMs). The accompanying datasheet provides comprehensive technical specifications, including maximum ratings, detailed electrical characteristics, thermal performance data, and dynamic switching parameters. It is the ideal resource for designers implementing primary switches in demanding 24V to 48V power architectures requiring high efficiency and reliability.

📄 Preview PAGE OF 11

Page 1 Text Content

January 2012

FDB2572 N-Channel Power Trench® MOSFET 150V, 29A, 54mΩ Features Applications r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26n C (Typ.), VGS = 10V

Distributed Power Architectures and VRMs

Low Miller Charge

Primary Switch for 24V and 48V Systems

Low QRR Body Diode

High Voltage Synchronous Rectifier

UIS Capability (Single Pulse and Repetitive Pulse)

Formerly developmental type 82860

DRAIN (FLANGE)

SOURCE

TO-263AB FDB SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC = 25o C, VGS = 10V)

ID Continuous (TC = 100o C, VGS = 10V)

Continuous (Tamb = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation

Derate above 25o C 0.9 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case 1.11 , TO-263

RθJA , TO-263 (Note 2) 62Thermal Resistance Junction to Ambient

RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

2012 Fairchild Semiconductor Corporation FDB2572 Rev. C

Page Summary Contents For Fairchild FDB2572 FDP2572 User Manual

Page 1 January 2012 FDB2572 N-Channel Power Trench® MOSFET 150V, 29A, 54mΩ Features Applications r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26n C (Typ.), VGS = 10V...
Page 2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB2572 FDB2572 TO-263AB 330mm 24mm 800 units Electrical Characteristics TC = 25°C unless otherwise...
Page 3 Typical Characteristics TC = 25°C unless otherwise noted IS IP IO LT IP IE , P θJ , N IZ 1.2 IM VGS = 10V TC, CASE TEMPERATURE (o C) TC, CASE TEMPERATURE (o C) Figure 1. Normalized Power Dissipation v...
Page 4 Typical Characteristics TC = 25°C unless otherwise noted IN IS TA , D IN , D IN 10µs STARTING TJ = 25o C OPERATION IN THIS STARTING TJ = 150o C AREA MAY BE 10ms LIMITED BY r DS(ON) If R = 0 SINGLE PUL...
Page 5 Typical Characteristics TC = 25°C unless otherwise noted , C PA IT IZ VGS = VDS, ID = 250µA ID = 250µA TJ, JUNCTION TEMPERATURE (o C) TJ, JUNCTION TEMPERATURE (o C) Figure 11. Normalized Gate Threshol...
Page 6 Test Circuits and Waveforms VDS BVDSS VARY t P TO OBTAIN REQUIRED PEAK IAS RG 0V IAS Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDD Qg(TOT) VGS = 10V DUT VGS = 2V I...
Page 7 Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines RθJA = 26.51+ 19.84/(0.262+Area) EQ.2 the maxim...
Page 8 PSPICE Electrical Model .SUBCKT FDB2572 2 1 3 ; rev April 2002 CA 12 8 5.5e-10 Cb 15 14 7.4e-10 LDRAIN Cin 6 8 1.7e-9 DPLCAP DRAIN Dbody 7 5 Dbody MOD RLDRAIN Dbreak 5 11 Dbreak MOD RSLC1 DBREAK Dplca...
Page 9 SABER Electrical Model REV April 2002 ttemplate FDB2572 n2,n1,n3 electrical n2,n1,n3 var i iscl dp..model dbodymod = (isl=6.0e-11,nl=1.14,rs=3.9e-3,trs1=3.5e-3,trs2=3.0e-6,cjo=1.1e-9,m=0.63,tt=6.2e-8,...
Page 10 SPICE Thermal Model th JUNCTION REV 26 April 2002 FDB2572 CTHERM1 TH 6 3.8e-3 CTHERM2 6 5 4.0e-3 CTHERM3 5 4 4.2e-3 RTHERM1 CTHERM1 CTHERM4 4 3 4.3e-3 CTHERM5 3 2 8.5e-3 CTHERM6 2 TL 3.0e-2 RTHERM1 TH...
Page 11 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 11
File Size 362.69 KB
Published June 16, 2026
4 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What voltage range does the FDB2572 support between drain and source?

The device has a Drain to Source Voltage (VDSS) rating of 150V.

What is the continuous on-resistance for this MOSFET at room temperature?

At T=25°C, the continuous Drain-Source On Resistance (RDS(ON)) is between 0.050 and 0.075 Ω.

What are the permitted operating temperature ranges?

The device supports an operating and storage temperature range of -55 to 175°C.

Where can I buy genuine parts without risk of counterfeits?

Purchase directly from Fairchild or through Authorized Fairchild Distributors listed on their webpage.