# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Fairchild FCP4N60 User Manual

Summary

The FCP4N60 is a 600V N-Channel SuperFET MOSFET designed for high-efficiency power conversion in switching mode operations. Featuring proprietary technology, this component ensures outstanding low on-resistance and superior switching performance, ideal for system miniaturization. This comprehensive manual provides all necessary technical details, including absolute maximum ratings, thermal characteristics, detailed electrical parameters (transconductance, capacitance), and dynamic switching timings needed to ensure reliable integration into various AC/DC power systems.

📄 Preview 📖 Table of Contents Contents PAGE OF 8

Page 1 Text Content

FC P4N 60 600V N -C hannel M SFET

December 2008

Super FET

FCP4N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

Typ. RDS(on) = 1.0Ω

balance mechanism for outstanding low on-resistance and

Ultra low gate charge (typ. Qg = 12.8n C) lower gate charge performance.

Low effective output capacitance (typ. Coss.eff = 32p F) This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

100% avalanche tested

withstand extreme dv/dt rate and higher avalanche energy.

Ro HS Compliant Consequently, Super FET is very suitable for various AC/DC

power conversion in switching mode operation for system miniaturization and higher efficiency.

TO-220

FCP Series G

Absolute Maximum Ratings Symbol Parameter FCP4N60 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 3.9

- Continuous (TC = 100°C) 2.5

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ± 30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1) 3.9

EAR Repetitive Avalanche Energy (Note 1) 5.0 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.4 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter FCP4N60 Unit RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient °C/W

©20 08 Fairchild Semiconductor Corporation www.fairchildsemi.com FC P4N60 Rev. A1

Page Summary Contents For Fairchild FCP4N60 User Manual

Page 1 FC P4N 60 600V N -C hannel M SFET December 2008 Super FET FCP4N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high voltage MO...
Page 2 FC P4N 60 600V N -C hannel M SFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP4N60 FCP4N60 TO-220 Electrical Characteristics TC = 25°C unles...
Page 3 FC P4N 60 600V N -C hannel M SFET Typical Performance Characteristics ap ac ita nc [p F] ],D ra in -S ou rc n- es is ta nc , D ra in ur re nt [A Figure 1. On-Region Characteristics Figure 2. Transfer ...
Page 4 FC P4N 60 600V N -C hannel M SFET Typical Performance Characteristics (Continued) , D ra in ur re nt [A , ( or al iz ed ra in -S ou rc re ak do ol ta ge Figure 7. Breakdown Voltage Variation Figure 8....
Page 5 FC P4N 60 600V N -C hannel M SFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.fairchildsemi....
Page 6 FC P4N 60 600V N -C hannel M SFET Peak Diode Recovery dv/dt Test Circuit & Waveforms www.fairchildsemi.com FCP4N60 Rev. A1
Page 7 FC P4N 60 600V N -C hannel M SFET Mechanical Dimensions TO - 220 Dimensions in Millimeters www.fairchildsemi.com FCP4N60 Rev. A1
Page 8 FC P4N 60 600V N -C hannel M SFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is no...