Fairchild FDC6401N User Manual

FD 6401N

October 2001

FDC6401N Dual N-Channel 2.5V Specified Power Trench MOSFET General Description Features This Dual N-Channel MOSFET has been designed

• 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 95 mΩ @ VGS = 2.5 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

low gate charge, low RDS(ON) and fast switching speed. • Low gate charge (3.3 n C)

Applications • High performance trench technology for extremely low RDS(ON)

• DC/DC converter

• Battery Protection • High power and current handling capability

• Power Management

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±12 ID Drain Current – Continuous (Note 1a) 3.0

– Pulsed

PD Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b) 0.9 (Note 1c) 0.7

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

.401 FDC6401N 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDC6401N Rev C (W)