Fairchild FQP16N25C FQPF16N25C User Manual
Summary
This N-Channel MOSFET is a high-performance power electronic component optimized for superior switching efficiency and reliability in demanding applications. The comprehensive manual provides detailed specifications, including absolute maximum ratings, thermal characteristics, and precise electrical parameters like switching times and on-resistance. It is specifically engineered for use in high-efficiency DC/DC converters, uninterrupted power supplies (UPS), switch mode power sources, and sophisticated motor control systems.
Page 1 Text Content
FQ P16N 25C /FQ PF16N 25C
QFET®
FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 41 n C) planar stripe, DMOS technology. Low Crss ( typical 68 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP16N25C FQPF16N25C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 15.6 15.6 *
- Continuous (TC = 100°C) 9.8 9.8 *
IDM Drain Current - Pulsed (Note 1) 62.4 62.4 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 15.6 EAR Repetitive Avalanche Energy (Note 1) 13.9 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 1.11 0.34 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP16N25C FQPF16N25C Units RθJC Thermal Resistance, Junction-to-Case 0.9 2.89 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
Page Summary Contents For Fairchild FQP16N25C FQPF16N25C User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 1.12 MB |
| Published | June 22, 2026 |
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Frequently Asked Questions
What types of converters or controls are these MOSFETs best suited for?
They are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor controls.
What is the maximum continuous drain current I can expect at 25°C?
The maximum continuous drain current (Idc) is 15.6 A at a junction temperature of 25°C.
Does the device require derating if I operate it above 25°C?
Yes, power dissipation must be derated when operating temperatures are above 25°C.
Are these components approved for use in life support systems?
No. Fairchild’s products are not authorized for use as critical components in life support devices without express written approval.