Fairchild FDC6306P User Manual
Summary
The FDC6306P is a high-performance Dual P-Channel MOSFET utilizing advanced PowerTrench technology and housed in a miniature SuperSOT-6 package. This component offers superior switching speed and minimal on-state resistance, making it ideal for space-constrained power solutions. The accompanying technical datasheet provides engineers with comprehensive specifications, including absolute maximum ratings, thermal resistance curves, detailed switching times, and electrical characteristics. It is designed for applications such as critical load switches, advanced battery protection circuits, and general power management systems requiring high reliability in a small footprint.
Page 1 Text Content
February 1999
FDC6306P Dual P-Channel 2.5V Specified Power Trench MOSFET
Features
General Description These P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. R = 0.170 Ω @ V = -4.5 V
DS(on) GS
using Fairchild Semiconductor's advanced Power Trench
= 0.250Ω @ V = -2.5 V process that has been especially tailored to minimize DS(on) GS
on-state resistance and yet maintain low gate charge for
superior switching performance. Low gate charge (3 n C typical).
Fast switching speed.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications
• High performance trench technology for extremely
where the bigger more expensive SO-8 and TSSOP-8
low RDS(ON).
packages are impractical.
Super SOTTM-6 package: small footprint (72% smaller
Applications
than standard SO-8); low profile (1mm thick).
Load switch Battery protection • Power management
Super SOT -6TM
Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±8 ID Drain Current - Continuous (Note 1a) -1.9
- Pulsed -5
PD Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b)
(Note 1c)
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
.306 FDC6306P 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation FDC6306P Rev. C
Page Summary Contents For Fairchild FDC6306P User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 61.63 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What type of package is best suited for small power management applications?
It uses the SuperSOT-6 package, which offers a 72% smaller footprint and low profile compared to standard SO-8.
What are the maximum continuous drain current ratings?
The maximum continuous drain current (Id) rating is -1.9 A for pulsed operation and -1.9 A at ambient reference conditions.
Can this device be used in life support systems or medical devices?
No, its use as a critical component in life support devices requires the express written approval of Fairchild Semiconductor.
How does thermal resistance affect proper mounting?
The package's thermal resistance R is cumulative (R = θJC + θCA) and depends on user board design, such as using 2 oz. copper pads.