Fairchild FCP380N60E FCPF380N60E User Manual
Summary
Built for advanced power electronics, this high-performance N-Channel MOSFET utilizes SuperFET II technology to achieve superior efficiency in demanding AC/DC power conversion systems. Key advantages include ultra-low on-resistance and minimized switching losses for system miniaturization. This technical manual provides comprehensive data sheets for power design engineers, covering maximum ratings, detailed electrical characteristics, robust thermal profiles, and precise switching performance metrics required for optimal circuit integration.
Page 1 Text Content
FC P380N 60E / FC PF380N 60E N -C hannel SFET
March 2012
Super FET® II
FCP380N60E / FCPF380N60E 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
Max. RDS(on) = 380mΩ
balance mechanism for outstanding low on-resistance and lower Ultra Low Gate Charge (Typ. Qg = 34n C) gate charge performance.
Low Effective Output Capacitance (Typ. Coss.eff = 97p F) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and
100% Avalanche Tested
withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
TO-220FG
SDTO-220
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter FCP380N60E FCPF380N60E Units VDSS Drain to Source Voltage
- DC ±20
VGSS Gate to Source Voltage
- AC (f > 1Hz) ±30 -Continuous (TC = 25o C) 10.2 10.2*
ID Drain Current
-Continuous (TC = 100o C) 6.4 6.4*
IDM Drain Current - Pulsed (Note 1) 30.6 30.6* EAS Single Pulsed Avalanche Energy (Note 2) 211.6 m J IAR Avalanche Current (Note 1) 2.3 EAR Repetitive Avalanche Energy (Note 1) 1.06 m J Peak Diode Recovery dv/dt (Note 3)
dv/dt V/ns
MOSFET dv/dt
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.85 0.25 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FCP380N60E FCPF380N60E Units
RθJC Thermal Resistance, Junction to Case 1.18
o C/WRθCS
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCP380N60E / FCPF380N60E Rev. C4
Page Summary Contents For Fairchild FCP380N60E FCPF380N60E User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 296.62 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What is the continuous drain current at T = 25°C?
It is 10.2 A for both FCP380N60E and FCPF380N60E.
What is the device's total gate charge (Qg(tot))?
The typical value for Qg(tot) is 34 nC.
How resistant is it to temperature changes?
It operates in a temperature range from -55°C to +150°C.
What are the thermal resistances?
RthJC is 1.18 °C/W and RthJA is 62.5 °C/W for FCP380N60E.