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Fairchild FCD5N60 FCU5N60 User Manual

Summary

Discover a high-efficiency 600V N-Channel MOSFET utilizing proprietary SuperFET technology. This advanced device is engineered with ultra-low on-resistance and reduced gate charge for superior switching performance, ideal for miniaturizing power conversion systems. The manual provides comprehensive technical specifications, including electrical limits, thermal characteristics, and detailed deep dives into key parameters like Rds(on) and capacitance. It is essential for electronics engineers designing high-efficiency AC/DC circuits and demanding switch mode power applications.

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FC 5N 60 / FC 5N 60 600V N -C hannel M SFET

December 2008

Super FET

FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

Typ. Rds(on)=0.81Ω

balance mechanism for outstanding low on-resistance and

Ultra low gate charge (typ. Qg=16n C) lower gate charge performance.

This advanced technology has been tailored to minimize

Low effective output capacitance (typ. Coss.eff=32p F)

conduction loss, provide superior switching performance, and 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET is very suitable for various AC/DC

Ro HS Compliant

power conversion in switching mode operation for system miniaturization and higher efficiency.

D-PAK SD I-PAK FCD Series G

FCU Series

Absolute Maximum Ratings Symbol Parameter FCD5N60 / FCU5N60 Unit VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C) 4.6 - Continuous (TC = 100°C) 2.9

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ± 30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1) 4.6

EAR Repetitive Avalanche Energy (Note 1) 5.4 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.43 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter FCD5N60/FCU5N60 Unit RθJC Thermal Resistance, Junction-to-Case 2.3 °C/W

RθJA Thermal Resistance, Junction-to-Ambient °C/W

©20 08 Fairchild Semiconductor Corporation www.fairchildsemi.com FC D5N60 / FCU5N60 Rev. B1

Page Summary Contents For Fairchild FCD5N60 FCU5N60 User Manual

Page 1 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET December 2008 Super FET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generatio...
Page 2 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCD5N60 FCD5N60TM D-PAK 380mm 16mm FCD5N60 FCD5N60TF D-...
Page 3 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Typical Performance Characteristics ap ac ita nc [p F] (O ) [ , D ra in ur re nt [A ra in -S ou rc n- es is ta nc Figure 1. On-Region Characteristics Figure...
Page 4 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Typical Performance Characteristics (Continued) , ( or al iz ed , D ra in ur re nt [A ra in -S ou rc re ak do ol ta ge Figure 7. Breakdown Voltage Variation...
Page 5 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.fair...
Page 6 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Peak Diode Recovery dv/dt Test Circuit & Waveforms www.fairchildsemi.com FCD5N60 / FCU5N60 Rev. B1
Page 7 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Mechanical Dimensions D-PAK Dimensions in Millimeters www.fairchildsemi.com FCD5N60 / FCU5N60 Rev. B1
Page 8 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET Package Dimensions (Continued) I-PAK Dimensions in Millimeters www.fairchildsemi.com FCD5N60 / FCU5N60 Rev. B1
Page 9 FC 5N 60 / FC 5N 60 600V N -C hannel M SFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,...