Vishay Semiconductor VESD05A1B-HD1 User's Manual and Specifications
Summary
The VESD05A1B-HD1 is an ultra-compact ESD protection diode engineered to safeguard sensitive electronic signal and data lines from harmful voltage transients in both positive and negative directions. This bi-directional device offers reliable, low-leakage transient clamping using a minimal physical footprint. Ideal for electronics designers, the product manual provides comprehensive guidance on electrical characteristics, surge performance ratings (IEC 61000-4 standards), and compliance requirements, ensuring seamless integration of robust overvoltage protection into demanding circuit designs.
Page 1 Text Content
VESD05A1B-HD1 Vishay Semiconductors
ESD-Protection Diode in LLP1006-2L
Features Ultra compact LLP1006-2L package Low package height < 0.4 mm 1-line ESD-protection Low leakage current < 0.1 µA Low load capacitance CD = 12 p F (VR = 2.5 V; f = 1 MHz) ESD-protection acc. IEC 61000-4-2 ± 30 k V contact discharge ± 30 k V air discharge High surge current acc. IEC61000-4-5 IPP > 3 A Soldering can be checked by standard vision inspection. No X-ray necessary AEC Q101 qualified Lead (Pb)-free component Pin plating Ni Pd Au (e4) no whisker growth Component in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC
Marking (example only)
Bar = Cathode marking XY X = Date code Y = Type code (see table below)
Ordering Information
Taped units per reel
Device name Ordering code Minimum order quantity
(8 mm tape on 7" reel)
VESD05A1B-HD1 VESD05A1B-HD1-GS08
Package Data
Package Type Molding compound
Device name Weight Moisture sensitivity level Soldering conditions
name code flammability rating
MSL level 1
VESD05A1B-HD1 LLP1006-2L 0.72 mg UL 94 V-0 260 °C/10 s at terminals
(according J-STD-020)
Absolute Maximum Ratings Rating Test conditions Symbol Value Unit
Peak pulse current Acc. IEC 61000-4-5, t P = 8/20 µs/single shot IPPM
Peak pulse power Acc. IEC 61000-4-5, t P = 8/20 µs/single shot PPP
Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 k V
ESD immunity
Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 k V Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C
** Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 81796 For technical support, please contact: [email protected] www.vishay.com Rev. 1.3, 27-Oct-08
Page Summary Contents For Vishay Semiconductor VESD05A1B-HD1 User's Manual and Specifications
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 7 |
| File Size | 115.85 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What are the ESD ratings for contact and air discharge?
The device can withstand $\pm 30\text{ kV}$ for both contact and air discharges, acc. IEC 61000-4-2. It also has a high surge current of $> 3\text{ A}$ PP (IEC61000-4-5).
How does the protection diode operate in Bidirectional Asymmetrical (BiAs) mode?
It protects one line; when a positive transient exceeds $\text{V}_{\text{BR}}$, it shorts current to ground, and similarly for negative transients, exhibiting non-symmetrical clamping behavior.
What are the operational temperature limits for this diode?
The junction temperature range is $-40$ to $+125^{\circ}\text{C}$, while storage temperature is $-55$ to $+150^{\circ}\text{C}$.
Is special testing required during component assembly (soldering)?
No X-ray is necessary; standard vision inspection can be used to check the component after soldering.