Vishay Semiconductor - TEMT1000, 1020, 1030, 1040 Silicon Phototransistor Data Manual
Summary
These high-speed Silicon NPN phototransistors are ideal for robust sensing applications in electronic control and drive circuitry. This manual provides comprehensive specifications, including detailed electrical characteristics, relative sensitivity graphs, and performance data crucial for component selection. It is essential reading for engineers and designers who require reliable optical interrupters or detectors for specialized industrial and consumer electronics systems.
Page 1 Text Content
TEMT1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Silicon Phototransistor
Description
TEMT1000 TEMT1020
TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight
TEMT1030
filter devices are sensitive for IR radiation only.
Features
High photo sensitivity TEMT1040
Fast response times Angle of half sensitivity ϕ = ± 15° Daylight filter matched to IR Emitters (λ = 870 nm to 950 nm) Versatile terminal configurations Matched IR Emitter series: TSML1000 IR Detector for Daylight application
Photo interrupters
Applications Counter
Detector in electronic control and drive circuits Encoder
Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Emitter Collector Voltage VECO Collector Current IC m A Peak Collector Current tp/T = 0.5, tp ≤ 10 ms ICM m A Total Power Dissipation Tamb ≤ 55 °C Ptot m W Junction Temperature Tj °C Storage Temperature Range Tstg - 40 to + 100 °C Operating Temperature Range Tamb - 40 to + 85 °C Soldering Temperature t ≤ 5 s Tsd <260 °C Thermal Resistance Junction/Ambient Rth JA K/W
Basic Characteristics Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Collector Emitter Voltage IC = 1 m A VCEO Collector Dark Current VCE = 20 V, E = 0 ICEO n A Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 CCEO p F Angle of Half Sensitivity ±15 deg Wavelength of Peak Sensitivity λp nm Range of Spectral Bandwidth λ0.5 750 to 980 nm Collector Emitter Saturation Ee = 1 m W/cm2, VCEsat 0.3 Voltage
λ = 950 nm, IC = 0.1 m A
Turn-On Time VS = 5 V, IC = 5 m A, ton 2.0 µs
RL = 100 Ω
Document Number 81554 www.vishay.com Rev. 5, 21-May-03
Page Summary Contents For Vishay Semiconductor - TEMT1000, 1020, 1030, 1040 Silicon Phototransistor Data Manual
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 10 |
| File Size | 456.78 KB |
| Published | June 05, 2026 |
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