Toshiba TPC8005−H Data Handbook
Summary
Enhance power efficiency in portable electronics with this high-speed N-Channel MOS Field Effect Transistor. Engineered for applications requiring small footprints and reliable performance, it offers low $R_{DS(ON)}$ and minimized gate charge, making it ideal for notebook PCs, DC-DC converters, and Li-ion battery systems. The product manual provides comprehensive technical specifications, detailing critical electrical characteristics, thermal resistance profiles, and voltage/current ratings necessary for optimal system design integration.
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TPC8005-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS)
TPC8005−H
High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications Unit: mm
Portable Equipment Applications Notebook PC Applications
Small footprint due to small and thin package High speed switching : 60% speed up (compare with current type) Small gate charge : Qg = 20 n C (typ.) Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
JEDEC ―
Gate-source voltage VGSS ±20 V
JEITA ―
DC (Note 1) ID 11
Drain current
TOSHIBA 2-6J1B
Pulse (Note 1) IDP 44
Drain power dissipation (t = 10 s) Weight: 0.080 g (typ.)
(Note 2a) PD 2.4 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W
Circuit Configuration
Single pulse avalanche energy (Note 3) EAS 157 m J Avalanche current IAR 11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 m J Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8005−H Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 502.65 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
What is the typical drain-source ON resistance?
The typicial Drain-source ON resistance R_{DS(ON)} is 13 mΩ.
Is this component sensitive to static discharge?
Yes, the manual warns that this transistor is an electrostatic sensitive device and requires careful handling.
Can I use this product in mission-critical applications like medical or aviation equipment?
No, it is not intended for 'Unintended Usage' such as medical instruments or airplane control systems.