Toshiba TPC8108 Data Handbook

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TPC8108

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC8108

Lithium Ion Battery Applications

Unit: mm

Notebook PC Applications Portable Equipment Applications

• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 m A)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V

DC (Note 1) ID −11

Drain current

JEDEC ―

Pulse (Note 1) IDP −44

Drain power dissipation (t = 10 s) JEITA ―

PD 1.9 W

(Note 2a) TOSHIBA 2-6J1B Drain power dissipation (t = 10 s)

Weight: 0.080 g (typ.)

PD 1.0 W

(Note 2b) Single pulse avalanche energy

EAS 157 m J

(Note 3)

Circuit Configuration

Avalanche current IAR −11 A

Repetitive avalanche energy 7 5 8 6

EAR 0.19 m J

(Note 2a) (Note 4)

Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.