Toshiba TPC8208 Data Handbook
Summary
The TPC8208 is a high-performance Silicon N Channel MOS Field Effect Transistor designed for demanding portable electronics. Featuring an ultra-small footprint, low drain-source ON resistance, and minimal leakage current, it enhances efficiency in power-constrained devices. Ideal for developers working on notebook PCs, lithium-ion battery systems, and general consumer equipment. This technical manual provides comprehensive specifications, covering electrical characteristics (Vds, Vgs), thermal resistance, and operational guidelines necessary for integrating this reliable component into your next product design.
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TPC8208
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8208
Lithium Ion Battery Applications
Unit: mm
Notebook PC Applications Portable Equipment Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V Drain-gate voltage (RGS 20 k) VDGR 20 V Gate-source voltage VGSS 12 V
DC (Note 1) ID 5
Drain current
Pulse (Note 1) IDP 20 JEDEC ―
Single-device JEITA ― operation (Note 3a) PD (1) 1.5 Drain power
dissipation
TOSHIBA 2-6J1E
Single-device value at dual operation PD (2) 1.1 Weight: 0.080 g (typ.)
(Note 2a)
(Note 3b) Single-device operation (Note 3a) PD (1) 0.75 Drain power
dissipation
Circuit Configuration
Single-device value at dual operation PD (2) 0.45
(Note 2b)
(Note 3b) 8 7 6 5
Single pulse avalanche energy (Note 4) EAS 16.3 m J Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at dual operation
EAR 0.1 m J
(Note 2a, 3b, 5) Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8208 Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 221.31 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What is the maximum allowable operating channel temperature?
The channel temperature must remain below 150°C.
Is the TPC8208 suitable for high-reliability or life-critical equipment?
No. It is not intended for usage in equipment requiring extraordinarily high reliability, such as medical instruments or aerospace applications.
What characteristic indicates efficient performance for portable devices?
The low drain-source ON resistance is specified at 38 mΩ (typ.).
How does power dissipation change when using two units compared to one unit?
Thermal resistance changes; for instance, the dual operation R_th(ch-a) is listed as 114 °C/W.