Toshiba TPC8104-H Data Manual

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TPC8104-H

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)

TPC8104−H

High Speed and High Efficiency DC−DC Converters

Unit: mm

Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications

Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 n C (typ.) Low drain−source ON resistance : RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 m A)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V

JEDEC ―

Gate-source voltage VGSS ±20 V

JEITA ―

DC (Note 1) ID −5

Drain current TOSHIBA 2-6J1B

Pulse (Note 1) IDP −20

Weight: 0.080 g (typ.)

Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W

Circuit Configuration

Single pulse avalanche energy (Note 3) EAS 32.5 m J Avalanche current IAR −5 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 m J Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.