Toshiba TPC8201 Data Manual
Summary
High-performance N Channel MOS transistor designed for demanding power management applications, including portable equipment and lithium ion battery systems. This manual provides comprehensive technical documentation, detailing electrical characteristics (e.g., drain-source ON resistance, leakage current), thermal ratings, and maximum operating guidelines. It is essential reference material for electronics engineers and circuit designers building reliable consumer and industrial electronic devices.
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TPC8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8201
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications Notebook PCs
Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : |Yfs| = 6 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V
D C (Note 1) ID 5
Drain curren
Pulse (Note 1) IDP 20 JEDEC ―
Single-device JEITA ― operation PD (1) 1.5 Drain power (Note 3a) TOSHIBA 2-6J1E
dissipation (t = 10s)
(Note 2a) Single-device value Weight: 0.08 g (typ.)
at dual operation PD(2) 1.1 (Note 3b) Single-device operation PD (1) 0.75 Drain power
Circuit Configuration
(Note 3a)
dissipation (t = 10s) (Note 2b) Single-device value
at dual operation PD (2) 0.45 (Note 3b)
Single pulse avalanche energy (Note 4) EAS 32.5 m J Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at operation EAR 0.1 m J (Note 2a, 3b, 5) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8201 Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 336.82 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What maximum drain-source voltage rating does this transistor have?
The specified Drain-source voltage ($V_{DSS}$) is 30 V.
How should I handle this semiconductor device before installation?
This transistor is explicitly noted as an electrostatic sensitive device and must be handled with caution.
What types of equipment are prohibited or unsupported for use with this product?
It cannot be warranted for usage in systems requiring extraordinarily high quality, such as medical instruments, airplane instruments, or traffic signal devices.