Toshiba TPC6201 Data Manual
Summary
This comprehensive datasheet details the performance and specifications of the TPC6201 N-channel Power MOSFET transistor. Designed for demanding low-power applications, it features extremely low on-resistance (Rds(on)) and high switching efficiency, making it ideal for portable equipment, sophisticated notebook PC systems, and HDD motor drive circuits. This technical manual provides crucial data, including detailed electrical characteristics, thermal dissipation ratings, timing parameters, and maximum operating limits necessary for engineers who are designing sensitive and reliable power management solutions into consumer electronics.
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TPC6201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Unit: mm
Notebook PC Applications Portable Equipment Applications
Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.) High forward transfer admittance: |Yfs| = 3.8 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V Drain-gate voltage (RGS 20 k) VDGR 30 V Gate-source voltage VGSS 20 V
DC (Note 1) ID 2.5 Drain
current Pulse (Note 1) IDP 10
JEDEC ―
Single-device operation (Note 3a) PD (1) 0.9 Drain power
dissipation JEITA ―
(Note 2a) Single device value at TOSHIBA 2-3T1B
dual operation (Note 3b) PD (2) 0.76
Weight: 0.011 g (typ.)
Single-device operation (Note 3a) PD (1) 0.4 Drain power
dissipation (t 5 s)
(Note 2b) Single device value at Circuit Configuration
dual operation (Note 3b) PD (2) 0.31
Single pulse avalanche energy (Note 4) EAS 1.0 m J 6 4 Avalanche current IAR 1.25 A Repetitive avalanche energy (Note 5) EAR 0.16 m J Channel temperature Tch 150 °C Storage temperature range Tstg 55 to 150 °C
Thermal Characteristics
Marking (Note 6)
Characteristics Symbol Max Unit
Single-device operation
139Thermal Resistance
(Note 3a) Rth (ch-a) (2)
(channel-to-ambient) °C/W S 4 A
(t 5 s) (Note 2a) Single device value at
dual operation (Note 3b) Rth (ch-a) (2) Single-device operation
310Thermal Resistance
(Note 3a) Rth (ch-a) (2)
(channel-to-ambient) °C/W
(t 5 s) (Note 2b) Single device value at
dual operation (Note 3b) Rth (ch-a) (2)
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
Page Summary Contents For Toshiba TPC6201 Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 6 |
| File Size | 153.50 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
How should I handle this transistor during installation?
It is an electrostatically sensitive device and must be handled with caution.
What is the maximum specified drain-source voltage (VDS)?
The maximum rating for Drain-source voltage is 30 V.
Can this product be used in life-critical equipment?
No, it is not warranted for usage in equipment that requires extraordinarily high quality or reliability, such as medical instruments or aircraft systems.
What is the thermal resistance for dual device operation (t <= 5s)?
The R(2) value listed for dual operation is 400 °C/W (channel-to-ambient).