Toshiba TPC8016-H Data Manual
Summary
This comprehensive datasheet details the TPC8016-H, a high-speed N-Channel MOSFET designed for efficient DC-DC power conversion in portable electronics. Intended for designers creating notebook PCs, consumer devices, and general industrial equipment, this guide provides critical specifications on electrical parameters, thermal performance, current handling, and switching characteristics. Utilize this resource to ensure stable, reliable, and compact power solutions for demanding electronic applications.
Page 1 Text Content
查询TPC8016-H供应商
TPC8016-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8016-H
High Speed and High Efficiency DC-DC Converters
Unit: mm
Notebook PC Applications Portable Equipment Applications
• Small footprint due to small and thin package • High speed switching • Small gate charge: Qg = 48 nc (typ.) • Low drain-source ON resistance: RDS (ON) = 3.7 m O (typ.) • High forward transfer admittance: |Yfs| = 25 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V JEDEC ?
DC (Note 1) ID 15 JEITA ?
Drain current
Pulsed (Note 1) IDP 60
TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
PD 1.9 W Weight: 0.080 g (typ.)
(Note 2a) Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b)
Circuit Configuration
Single pulse avalanche energy
EAS 146 m J
(Note 3)
Avalanche current IAR 15 A Repetitive avalanche energy
EAR 0.19 m J
(Note 2a) (Note 4)
Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8016-H Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 8 |
| File Size | 79.63 KB |
| Published | June 06, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum drain-source voltage (Vds) for this transistor?
The maximum rated Drain-Source Voltage (DSS) is 30 V.
What precautions must I take when handling this component?
This transistor is explicitly named an electrostatic sensitive device, and careful handling is required.
How efficient is the switching performance of the unit?
The typical Drain-source ON resistance (R_DS(ON)) is 3.7 mΩ.
What types of applications are prohibited for this product?
It is not warranted for use in extraordinarily high quality systems, such as medical or airplane instruments.