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Toshiba TOSHIBA 2SK2613 User's Guide - Part 3

Summary

The 2SK2613 is a high-performance N Channel MOS Field Effect Transistor, optimized for demanding power electronics applications such as DC-DC converters and motor drives. This technical documentation provides comprehensive data, including detailed electrical characteristics, maximum ratings, thermal analysis, and switching parameters (e.g., $R_{DS(ON)} = 1.4 \Omega$, $V_{DSS} = 1000 V$). It is essential for electrical engineers and hardware designers who need reliable component specifications to develop robust circuit designs within industrial or consumer power systems.

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2SK2613

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII)

2SK2613

Switching Regulator Applications, DC-DC Converter and

Unit: mm

Motor Drive Applications

Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A)

Maximum Ratings (Ta  25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 1000 V Drain-gate voltage (RGS  20 k) VDGR 1000 V Gate-source voltage VGSS 30 V

DC (Note 1) ID 8

1. GATE

Drain current

Pulse (Note 1) IDP 24 2. DRAIN (HEAT SINK) 3. SOURSE

Drain power dissipation (Tc  25°C) PD 150 W Single pulse avalanche energy

JEDEC ―

(Note 2) EAS 910 m J

JEITA ―

Avalanche current IAR 8 A

TOSHIBA 2−16C1B

Repetitive avalanche energy (Note 3) EAR 15 m J

Channel temperature Tch 150 °C Weight: 4.6 g (typ.)

Storage temperature range Tstg 55~150 °C

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD  90 V, Tch  25°C, L  26.3 m H, RG  25 , IAR  8 A

Note 3: Repetitive rating: Pulse width limited by max junction temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Page Summary Contents For Toshiba TOSHIBA 2SK2613 User's Guide - Part 3

Page 1 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resist...
Page 2 2SK2613 Electrical Characteristics (Ta  25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS  30 V, VDS  0 V Drain-source breakdown voltage V (BR) GSS IG  ...
Page 3 2SK2613 Fo rw ar tra ns fe r a dm itt an ce fs (S ra in ur re nt (A ra in ur re nt (A ID – VDS ID – VDS Common source Common source Tc  25°C Tc  25°C Pulse test 6.5 5.75 Pulse test VGS  4.75 V VGS ...
Page 4 2SK2613 ra in ow er is si pa tio (W ap ac ita nc (p F) ra in -s ou rc on re si st an ce (O RDS (ON)  Tc IDR  VDS Common source VGS  10 V Pulse test ID  8 A VGS  0, 1 V Case temperature Tc (°C) D...
Page 5 2SK2613 ra in ur re nt (A rth  tw or al iz ed tr an si en t t he rm al im pe da nc th (t )/R th (c h- a) Duty  0.5 0.01 Single pulse 0.01 Duty  t/T Rth (ch-c)  0.833°C/W Pulse width tw (S) Av al a...
Page 6 2SK2613 000707EAARESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fa...

Manual Details

Brand Toshiba
Pages 6
File Size 236.76 KB
Published June 02, 2026
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Frequently Asked Questions

What handling precautions must be taken when using this component?

This transistor is an electrostatic sensitive device and must be handled with caution.

What are the recommended application fields for the 2SK2613?

It is suitable for Switching Regulator, DC-DC Converter, and Motor Drive Applications.

What limitations apply to the operating temperature of the channel?

The device must only be used under conditions where the channel temperature remains below 150°C.

Does this product guarantee performance in life support or medical equipment?

No, it is not warranted for 'Unintended Usage' that requires extraordinary high quality and/or reliability.