Toshiba TOSHIBA 2SK2615 User's Manual

2SK2615

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

2SK2615

DC−DC Converter, Relay Drive and Motor Drive

Unit: mm

Applications

Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 60 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID 2

Drain current

Pulse (Note 1) IDP 6

Drain power dissipation PD 0.5 W

Drain power dissipation (Note 2) PD 1.5 W

JEDEC ―

Channel temperature Tch 150 °C

JEITA ―

Storage temperature range Tstg −55~150 °C

TOSHIBA 2-5K1B

Note 1: Ensure that the channel temperature does not exceed 150°C.

Weight: 0.05 g (typ.)

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W

This transistor is an electrostatic-sensitive device. Please handle with caution.

Marking Part No. (or abbreviation code)

A line indicates lead (Pb)-free package or

Lot No. lead (Pb)-free finish.