Toshiba TLP705 User's Manual

TLP705

TOSHIBA Photocoupler Ga AℓAs IRED + Photo IC

TLP705

Plasma Display Panel. Unit in mm

Industrial Inverter

IGBT/Power MOS FET Gate Drive

TLP705 consists of a Ga AℓAs light emitting diode and a integrated photodetector. This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP

and has suited the safety standard reinforced insulation class.

So mounting area in safety standard required equipment can be reduced. TLP705 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP705 is capable of “direct” gate drive of lowr Power IGBTs.

• Peak output current : ±0.45 A (max)

• Operating frequency : 250k Hz (max)

• Guaranteed performance over temperature : −40 to 100°C

TOSHIBA 11-5J1

• Supply current : 3m A (max)

Weight：0.26 g (typ.)

• Power supply voltage : 10 to 20 V • Threshold input current : IFLH = 8 m A (max) • Switching time (tp LH / tp HL) : 200 ns (max) • Common mode transient immunity :±10 k V/µs(min)

• Isolation voltage : 5000 Vrms(min)

• UL Recognized :UL1577, File No.E67349 • Construction Mechanical Rating Pin Configuration (Top View)

7.62-mm pitch 10.16-mm pitch standard type TLPXXXF type

Creepage Distance 7.0 mm (min) 8.0 mm (min) Clearance 7.0 mm (min) 8.0 mm (min)

Insulation Thickness 0.4 mm (min) 0.4 mm (min) +0 .2 4. −0 .2

• Option (D4)

TÜV approved : EN60747-5-2 SHIELD

Certificate No. R50033433 Maximum operating insulation voltage : 890 Vpk Highest permissible over voltage : 8000 Vpk ( Note ) When a EN60747-5-2 approved type is needed, please designate the “Option(D4)”

Truth Table Schematic

ICC VCC

Input LED Tr1 Tr2 Output (Tr1)

H ON ON OFF H

VF IO

L OFF OFF ON L

3− (Tr2) VO

SHIELD A 0.1 µF bypass capacitor must be connected between pins 6 and 4. (See Note 6.)