Toshiba TC7SZ00F, TC7SZ00FU User's Guide

TC7SZ00F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SZ00F, TC7SZ00FU 2-Input NAND Gate

Features

TC7SZ00F

• High output current : ±24 m A (min) at VCC = 3 V • Super high speed operation : tpd = 2.4 ns (typ.)

at VCC = 5 V, 50 p F

• Operating voltage range : VCC = 1.8 to 5.5 V • 5.5-V tolerant inputs • 5.5-V power down protection output • Matches the performance of TC74LCX series when operated at

(SMV)

3.3-V VCC

TC7SZ00FU

Marking

Product Name

(USV)

Weight Absolute Maximum Ratings (Ta = 25°C) SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.)

Characteristics Symbol Rating Unit

Supply voltage VCC −0.5 to 6 V Pin Assignment (top view) DC input voltage VIN −0.5 to 6 V

−0.5 to 6 (Note 1) IN B 1 5 VCC

DC output voltage VOUT

−0.5 to VCC +0.5 (Note 2)

Input diode current IIK −20 m A IN A 2

Output diode current IOK −20 (Note 3) m A

DC output current IOUT ±50 m A GND 3 4 OUT Y

DC VCC/ground current ICC ±50 m A

Power dissipation PD 200 m W

Storage temperature Tstg −65 to 150 °C

Lead temperature (10 s) TL 260 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0V Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings. Note 3: VOUT < GND