# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

SIEMENS SN 7000 Data Sheet/Manual

Summary

A reliable N-channel small-signal transistor designed for low-voltage, logic-level switching applications. This comprehensive technical datasheet provides essential product information for electronics designers, detailing maximum ratings, static electrical characteristics, and dynamic performance. It covers operational parameters like $R_{DS(on)}$ and threshold voltage across extreme temperatures, enabling accurate circuit design and system optimization.

📄 Preview PAGE OF 7

Page 1 Text Content

SN 7000

SIPMOS ® Small-Signal Transistor

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

Pin 1 Pin 2 Pin 3

Type VDS ID RDS(on) Package Marking

SN 7000 60 V 0.25 A 5 Ω TO-92 SN 7000 Type Ordering Code Tape and Reel Information SN 7000 Q62702-S638 E6288 SN 7000 Q62702-S637 E6296

Maximum Ratings

Parameter Symbol Values Unit

Drain source voltage VDS Drain-gate voltage

RGS = 20 kΩ

Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20

Continuous drain current ID TA = 25 °C 0.25 DC drain current, pulsed IDpuls TA = 25 °C Power dissipation Ptot TA = 25 °C 0.63

Semiconductor Group 12/05/1997

Page Summary Contents For SIEMENS SN 7000 Data Sheet/Manual

Page 1 SN 7000 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Type VDS ID RDS(on) Package Marking SN 7000 60 V 0.25 A 5 Ω TO-92 SN 7000...
Page 2 SN 7000 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) Rth JA ≤ 200 K/...
Page 3 SN 7000 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.2...
Page 4 SN 7000 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C 0.17 Inver...
Page 5 SN 7000 Power dissipation Drain current Ptot = ƒ(TA) ID = ƒ(TA) parameter: VGS ≥ 10 V tot 0.55 °C °C TA TA Safe operating area ID=f(VDS) Drain-source breakdown voltage parameter : D = 0.01, TC=25°C V(...
Page 6 SN 7000 Typ. output characteristics Typ. drain-source on-resistance ID = ƒ(VDS) RDS (on) = ƒ(ID) parameter: tp = 80 µs , Tj = 25 °C parameter: tp = 80 µs, Tj = 25 °C 0.60 Ptot = 1W VGS [V] DS (on) VGS...
Page 7 SN 7000 Drain-source on-resistance Gate threshold voltage RDS (on) = ƒ(Tj) VGS (th) = ƒ(Tj) parameter: ID = 0.5 A, VGS = 10 V parameter: VGS = VDS, ID = 1 m A DS (on) GS(th) 3.6 1.6 typ typ 2% Tj Tj T...

Manual Details

Brand Siemens
Pages 7
File Size 79.54 KB
Published June 01, 2026
34 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the maximum drain-source voltage before breakdown?

The device's drain-source breakdown voltage ($ ext{V(BR)DSS}$) is rated at 60 V.

What are the operational temperature limits?

It can operate within a temperature range of -55 °C to +150 °C.

What is the typical on-state resistance of the MOSFET?

The typical drain-source on-resistance ($ ext{R}_{DS(on)}$) is 2.5 Ohms.

What is the maximum continuous drainage current allowable?

The continuous drain current ($ ext{I}_{ADT}$) must not exceed 0.25 A.