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Siemens SMBD 6100 Data Sheet/Manual

Summary

Essential technical documentation for the SMBD 6100 Silicon Switching Diode Array, designed for demanding high-speed switching applications. This comprehensive manual details critical electrical parameters, including breakdown voltage, AC/DC characteristics, and power dissipation limits across various operating temperatures. It serves as a vital resource for electronics designers and engineers needing reliable components for robust circuit board development.

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Silicon Switching Diode Array SMBD 6100

For high-speed switching applications Common cathode

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

SMBD 6100 Q68000-A8438s5B SOT-23

Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR Peak reverse voltage VRM Forward current IF m A Surge forward current, = 1 µs IFS 4.5 Total power dissipation, TS ˚C Ptot m W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient2) Rth JA ≤ 600 K/W

Junction - soldering point Rth JS ≤ 460

1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm

× 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 5.91

Page Summary Contents For Siemens SMBD 6100 Data Sheet/Manual

Page 1 Silicon Switching Diode Array SMBD 6100 For high-speed switching applications Common cathode Type Marking Ordering Code Package1)Pin Configuration (tape and reel) SMBD 6100 Q68000-A8438s5B SOT-23 Maxi...
Page 2 SMBD 6100 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC characteristics V(BR) VBreakdown voltage I(BR) = 100 µA VF m VForward vol...
Page 3 SMBD 6100 Forward current IF (TA*; TS) Reverse current IR = (TA) Package mounted on epoxy Forward current IF (VF) Peak forward current IFM (t) TA = 25 ˚C TA = 25 ˚C Semiconductor Group
Page 4 SMBD 6100 Forward voltage VF (TA) Semiconductor Group