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Siemens BFT 92W Data Sheet / Manual

Summary

Optimize your RF amplifier design with this high-performance silicon transistor. Rated for broadband amplification up to 2GHz and handling collector currents of up to 20mA, it offers reliable performance in demanding electronic applications. This comprehensive manual details the core operating parameters, including transition frequency curves, power gain (S21) versus frequency and current, breakdown voltages, and capacitance values. It is an essential reference guide for RF circuit designers and engineers who require precise selection and implementation of high-frequency switching components.

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查询BFT92W供应商

BFT 92W

PNP Silicon RF Transistor

• For broadband amplifiers up to 2GHz at collector currents up to 20m A • Complementary type: BFR 92W (NPN)

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFT 92W W1s Q62702-F1681 1 = B 2 = E 3 = C SOT-323

Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC m A Base current IB Total power dissipation Ptot m W TS ≤ 105 °C Junction temperature Tj °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) Rth JS ≤ 225 K/W

1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group Dec-11-1996

Page Summary Contents For Siemens BFT 92W Data Sheet / Manual

Page 1 查询BFT92W供应商 BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20m A • Complementary type: BFR 92W (NPN) ESD: Electrostatic discharge sensitive device,...
Page 2 BFT 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 m A, IB ...
Page 3 BFT 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T GHz IC = 15 m A, VCE = 8 V, f = 500...
Page 4 BFT 92W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 f A BF = 98.533 NF = 0.90551 VAF = 10.983 IKF = 0.016123 ISE = 12.196 f A NE = 1.1172 BR = 1...
Page 5 BFT 92W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy m W Ptot °C TA,TS Permissible Pulse Load Rth JS = f (tp) Permissible Pulse Load Ptotmax/Ptot DC = f (tp) Rth JS Ptotmax/Pt...
Page 6 BFT 92W Collector-base capacitance Ccb = f (VCB) Transition frequency f T = f (IC) VBE = vbe = 0, f = 1MHz VCE = Parameter Ccb f T 1.4 VR IC Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f =...
Page 7 BFT 92W Power Gain Gma, Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz IC=15m A d B 0.9...

Manual Details

Brand Siemens
Pages 7
File Size 59.20 KB
Published June 04, 2026
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Frequently Asked Questions

What is the maximum allowed junction temperature?

The maximum total power dissipation allows continuous operation up to a junction temperature (Tj) of 150°C.

Are there any handling precautions for this device?

Yes, as it is an ESD sensitive device, observe handling precaution when using BFT 92W.

What are the performance specifications for its gain?

The power gain (G) ranges from 5 to 16 dB across frequencies depending on operating voltage and current.

What type of tests determine allowable pulse loading?

Allowable pulse loading is assessed using time domain data derived from parameters like 'D' (Pulse Load) in relation to junction temperature.