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SIEMENS SMBTA 55 SMBTA 56 DATA SHEET

Summary

These PNP Silicon AF Transistors are robust semiconductor components designed for critical switching and signal amplification applications in electronic circuits. Featuring high breakdown voltage and low collector-emitter/base saturation voltages, they ensure optimal performance and efficiency in sophisticated designs. The technical manual provides comprehensive specifications for engineers and designers, detailing maximum ratings, accurate DC and AC electrical characteristics, thermal parameters, and precise package information required for reliable circuit board integration.

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PNP Silicon AF Transistors SMBTA 55

SMBTA 56

High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA 05, SMBTA 06 (NPN)

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

SMBTA 55 s2H Q68000-A3386 SOT-23 SMBTA 56 s2G Q68000-A2882

Maximum Ratings Parameter Symbol Values Unit

SMBTA 55 SMBTA 56

Collector-emitter voltage VCE0 Collector-base voltage VCB0 Emitter-base voltage VEB0 Collector current IC m A Peak collector current ICM A1 Base current IB m A100 Peak base current IBM Total power dissipation, TS ˚C Ptot m W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient2) Rth JA ≤ 285 K/W

Junction - soldering point Rth JS ≤ 215

1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm mm mm/6 cm2 Cu.

Semiconductor Group 5.91

Page Summary Contents For SIEMENS SMBTA 55 SMBTA 56 DATA SHEET

Page 1 PNP Silicon AF Transistors SMBTA 55 SMBTA 56 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA 05, SMBTA 06 (NPN) Type Marking Ordering Code Package1)Pin Confi...
Page 2 SMBTA 55 SMBTA 56 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC ...
Page 3 SMBTA 55 SMBTA 56 Total power dissipation Ptot (TA*; TS) Collector current IC (VBE) Package mounted on epoxy VCE = 1 Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency f T (IC) VCE ...
Page 4 SMBTA 55 SMBTA 56 Base-emitter saturation voltage Collector-emitter saturation voltage IC (VBE sat), h FE = 10 IC = (VCE sat), h FE = 10 Collector cutoff current ICB0 (TA) DC current gain h FE = f (IC...

Manual Details

Brand Siemens
Pages 4
File Size 146.75 KB
Published June 02, 2026
27 views

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Frequently Asked Questions

What is the difference in breakdown voltage between SMBTA 55 and SMBTA 56?

SMBTA 55 has a maximum collector-emitter breakdown voltage (VCEO) of 60V, while SMBTA 56 is rated at 80V.

What is the maximum allowable power dissipation for these components?

The maximum total power dissipation (Ptot) is listed as 330 mW for both types.

How low can the output capacitance be?

Under standard conditions, the output capacitance ($C_{obo}$) is measured at –12– pF when $V_{CB} = 10 V$ and $f = 1 MHz$.